High-efficiency InGaN -based light-emitting diodes with nanoporous GaN:Mg structure

Applied Physics Letters

Volumn 88, Issue 8, 2006, Pages

  Lin, Chia Feng ^a   Zheng, Jing Hui ^a   Yang, Zhong Jie ^a   Dai, Jing Jie ^a   Lin, Der Yuh ^b   Chang, Chung Ying ^c   Lai, Zhao Xu ^c   Hong, C S ^c  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^c Luxxon Technology Corporation   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT EXTRACTION; MULTI QUANTUM-WELL (MQW) STRUCTURES; NANOPOROUS STRUCTURES; OXIDE REMOVING PROCESS;

ACTIVATION ENERGY; GALLIUM NITRIDE; MAGNESIUM PRINTING PLATES; OXIDATION; PHOTOELECTROCHEMICAL CELLS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 33644522731     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2178477     Document Type: Article

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