Growth of thick (112̄0) GaN using a metal interlayer

Applied Physics Letters

Volumn 85, Issue 20, 2004, Pages 4630-4632

  Tavernier, P R ^a,b   Imer, B ^a   DenBaars, S P ^a   Clarke, D R ^a  

^a University of California   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH CONDITIONS; HYDRIDE VAPOR PHASE EPITAXY (HVPE); METAL INTERLAYERS; VOID-ASSISTED SEPARATION;

ANNEALING; CRACKING (CHEMICAL); DELAMINATION; GROWTH (MATERIALS); HYDRIDES; INTERFACES (MATERIALS); METAL ANALYSIS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; TITANIUM; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 10944241530     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1818736     Document Type: Article

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