Suppression of crack generation in GaN epitaxy on Si using cubic SiC as intermediate layers

Applied Physics Letters

Volumn 88, Issue 9, 2006, Pages

  Komiyama, Jun ^a   Abe, Yoshihisa ^a   Suzuki, Shunichi ^a   Nakanishi, Hideo ^a  

^a Nissei Bldg   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GALLIUM NITRIDE; SILICON CARBIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CURRENT-VOLTAGE MEASUREMENTS; EPILAYERS; MONOCRYSTALLINE WURZITE STRUCTURE; SUPPRESSION;

CRACK PROPAGATION;

EID: 33644688425     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2175498     Document Type: Article

References (17)

1. S. Nakamura, M. Senoh, N. Iwasa, S. I. Nagahama, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, Appl. Phys. Lett. 70, 1417 (1997).
2. M. P. Mack, A. C. Abare, M. Hansen, P. Kozodoy, S. Keller, U. Mishra, L. A. Coldren, and S. P. DenBaars, J. Cryst. Growth 189/190, 837 (1998).
3. H. Sakai, T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Amano, and I. Akasaki, J. Cryst. Growth 189/190, 831 (1998).
4. M. A. Khan, Q. Chen, J. W. Wang, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. Schaff, and L. F. Eastman, Electron. Lett. 32, 357 (1996).
5. L. K. Li, J. Alperin, W. I. Wang, D. C. Look, and D. C. Reynolds, J. Vac. Sci. Technol. B 16, 1275 (1998).
6. W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, I. Omura, T. Ogura, and H. Ohashi, IEEE Trans. Electron Devices 50, 2528 (2003).
7. W. Saito, M. Kuraguchi, Y. Takada, K. Tsuda, I. Omura, and T. Ogura, IEEE Trans. Electron Devices 51, 1913 (2004).
8. A. Krost and A. Dadgar, Phys. Status Solidi A 194, 361 (2002).
9. T. Takeuchi, H. Amano, K. Hiramatsu, N. Sawaki, and I. Akasaki, J. Cryst. Growth 115, 634 (1991).
10. H. M. Liaw, R. Venugopal, J. Wan, R. Doyle, P. L. Fejes, and M. R. Melloch, Solid-State Electron. 44, 685 (2000).
11. H. M. Liaw, R. Venugopal, J. Wan, and M. R. Melloch, Solid-State Electron. 45, 1173 (2001).
12. S. Nishino, J. A. Powell, and H. A. Will, Appl. Phys. Lett. 42, 460 (1983).
13. S. Nishino, H. Suhara, H. Ono, and H. Matsunami, J. Appl. Phys. 61, 4889 (1987).
14. T. W. Weeks, Jr., M. D. Bremser, K. S. Ailey, E. Carlson, W. G. Perry, and R. F. Davis, Appl. Phys. Lett. 67, 401 (1995).
15. F. A. Ponce, B. S. Krusor, J. S. Major, Jr., W. E. Plano, and D. F. Welch, Appl. Phys. Lett. 67, 410 (1995).
16. E. V. Etzkorn and D. R. Clarke, J. Appl. Phys. 89, 1025 (2001).
17. Landolt-Börnstein, Numerical Data and Functional Relationships in Science and Technology, News Series, III, 17 A, edited by, O. Madelung, (Springer, New York, 1982).