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Physical Review B - Condensed Matter and Materials Physics

Volumn 77, Issue 20, 2008, Pages

Diffusion-reaction modeling of silicon oxide interlayer growth during thermal annealing of high dielectric constant materials on silicon

(2) Gopireddy, Deepthi a Takoudis, Christos G a,b

a 1120 Science and Engineering Offices (United States)

b University of Illinois at Chicago (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 43449129742 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.77.205304 Document Type: Article

Times cited : (15)

References (43)

1
- 0034739021
- NATUAS 0028-0836 10.1038/35023243
- A. I. Kingon, J. P. Maria, and S. K. Streiffer, Nature (London) NATUAS 0028-0836 10.1038/35023243 406, 1032 (2000).
- (2000) Nature (London) , vol.406 , pp. 1032
- Kingon, A.I.¹ Maria, J.P.² Streiffer, S.K.³

2
- 0031140867
- EDLEDZ 0741-3106 10.1109/55.568766
- S. H. Lo, D. A. Buchanan, Y. Taur, and W. Wang, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/55.568766 18, 209 (1997).
- (1997) IEEE Electron Device Lett. , vol.18 , pp. 209
- Lo, S.H.¹ Buchanan, D.A.² Taur, Y.³ Wang, W.⁴

3
- 0033731870
- SSTEET 0268-1242 10.1088/0268-1242/15/5/301
- E. Y. Wu, J. H. Stathis, and L.-K. Han, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/15/5/301 15, 425 (2000).
- (2000) Semicond. Sci. Technol. , vol.15 , pp. 425
- Wu, E.Y.¹ Stathis, J.H.² Han, L.-K.³

4
- 0033600230
- NATUAS 0028-0836 10.1038/21602
- D. A. Muller, T. Sorsch, S. Moccio, F. H. Baumann, K. Evans-Lutterodt, and G. Timp, Nature (London) NATUAS 0028-0836 10.1038/21602 399, 758 (1999).
- (1999) Nature (London) , vol.399 , pp. 758
- Muller, D.A.¹ Sorsch, T.² Moccio, S.³ Baumann, F.H.⁴ Evans-Lutterodt, K.⁵ Timp, G.⁶

5
- 0033307456
- TDIMD5 0163-1918
- H. F. Luan, S. J. Lee, C. H. Lee, S. C. Song, Y. L. Mao, Y. Senzaki, D. Robert, and D. L. Kwong, Tech. Dig. - Int. Electron Devices Meet. TDIMD5 0163-1918 1999, 141.
- Tech. Dig. - Int. Electron Devices Meet. , vol.1999 , pp. 141
- Luan, H.F.¹ Lee, S.J.² Lee, C.H.³ Song, S.C.⁴ Mao, Y.L.⁵ Senzaki, Y.⁶ Robert, D.⁷ Kwong, D.L.⁸

6
- 0032516989
- APPLAB 0003-6951 10.1063/1.122191
- G. B. Alers, D. J. Werder, Y. Chabal, H. C. Lu, E. P. Gusev, E. Garfunkel, T. Gustafsson, and R. S. Urdahl, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.122191 73, 1517 (1998).
- (1998) Appl. Phys. Lett. , vol.73 , pp. 1517
- Alers, G.B.¹ Werder, D.J.² Chabal, Y.³ Lu, H.C.⁴ Gusev, E.P.⁵ Garfunkel, E.⁶ Gustafsson, T.⁷ Urdahl, R.S.⁸

7
- 0030865462
- EDLEDZ 0741-3106
- S. A. Campbell, D. C. Gilmer, W. Xiao-Chuan, M.-T. Hsieh, H.-S. Kim, W. L. Gladfelter, and J. Yan, IEEE Electron Device Lett. EDLEDZ 0741-3106 44, 104 (1997).
- (1997) IEEE Electron Device Lett. , vol.44 , pp. 104
- Campbell, S.A.¹ Gilmer, D.C.² Xiao-Chuan, W.³ Hsieh, M.-T.⁴ Kim, H.-S.⁵ Gladfelter, W.L.⁶ Yan, J.⁷

8
- 0000020022
- APPLAB 0003-6951 10.1063/1.125779
- M. Copel, M. Gribelyuk, and E. Gusev, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.125779 76, 436 (2000).
- (2000) Appl. Phys. Lett. , vol.76 , pp. 436
- Copel, M.¹ Gribelyuk, M.² Gusev, E.³

9
- 0033312228
- TDIMD5 0163-1918
- W.-J. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, K. Onishi, T. Ngai, S. Banerjee, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet. TDIMD5 0163-1918 1999, 145.
- Tech. Dig. - Int. Electron Devices Meet. , vol.1999 , pp. 145
- Qi, W.-J.¹ Nieh, R.² Lee, B.H.³ Kang, L.⁴ Jeon, Y.⁵ Onishi, K.⁶ Ngai, T.⁷ Banerjee, S.⁸ Lee, J.C.⁹

10
- 0346534582
- JAPIAU 0021-8979 10.1063/1.371888
- G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.371888 87, 484 (2000).
- (2000) J. Appl. Phys. , vol.87 , pp. 484
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

11
- 0035872897
- JAPIAU 0021-8979 10.1063/1.1361065
- G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1361065 89, 5243 (2001).
- (2001) J. Appl. Phys. , vol.89 , pp. 5243
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

12
- 0037322229
- SSREDI 0167-5729 10.1016/S0167-5729(02)00113-9
- R. M. C. de Almeida and I. J. R. Baumvol, Surf. Sci. Rep. SSREDI 0167-5729 10.1016/S0167-5729(02)00113-9 49, 1 (2003).
- (2003) Surf. Sci. Rep. , vol.49 , pp. 1
- De Almeida, R.M.C.¹ Baumvol, I.J.R.²

13
- 79956040381
- APPLAB 0003-6951 10.1063/1.1506207
- Y. S. Lin, R. Puthenkovilakam, and J. P. Chang, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1506207 81, 2041 (2002).
- (2002) Appl. Phys. Lett. , vol.81 , pp. 2041
- Lin, Y.S.¹ Puthenkovilakam, R.² Chang, J.P.³

14
- 0000162605
- APPLAB 0003-6951 10.1063/1.125694
- E. P. Gusev, M. Copel, E. Cartier, I. J. R. Baumvol, C. Krug, and M. A. Gribelyuk, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.125694 76, 176 (2000).
- (2000) Appl. Phys. Lett. , vol.76 , pp. 176
- Gusev, E.P.¹ Copel, M.² Cartier, E.³ Baumvol, I.J.R.⁴ Krug, C.⁵ Gribelyuk, M.A.⁶

15
- 0034454056
- TDIMD5 0163-1918
- D. A. Buchanan, E. Gusev, E. Cartier, H. Okorn-Schmidt, K. Rim, M. Gribelyuk, A. Mocuta, A. Ajmera, M. Copel, S. Guha, N. Bojarczuk, A. Callegari, C. D'Emic, P. Kozlowski, K. Chan, R. J. Fleming, P. Jamison, J. Brown, and R. Arndt, Tech. Dig. - Int. Electron Devices Meet. TDIMD5 0163-1918 2000, 223.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2000 , pp. 223
- Buchanan, D.A.¹ Gusev, E.² Cartier, E.³ Okorn-Schmidt, H.⁴ Rim, K.⁵ Gribelyuk, M.⁶ Mocuta, A.⁷ Ajmera, A.⁸ Copel, M.⁹ Guha, S.¹⁰ Bojarczuk, N.¹¹ Callegari, A.¹² D'Emic, C.¹³ Kozlowski, P.¹⁴ Chan, K.¹⁵ Fleming, R.J.¹⁶ Jamison, P.¹⁷ Brown, J.¹⁸ Arndt, R.¹⁹

16
- 0347412025
- THSFAP 0040-6090 10.1016/S0040-6090(03)01311-7
- A. Roy Chowdhuri and C. G. Takoudis, Thin Solid Films THSFAP 0040-6090 10.1016/S0040-6090(03)01311-7 446, 155 (2004).
- (2004) Thin Solid Films , vol.446 , pp. 155
- Roy Chowdhuri, A.¹ Takoudis, C.G.²

17
- 0035947203
- VACUAV 0042-207X 10.1016/S0042-207X(01)00114-2
- B. G. Segda, M. Jacquet, and J. P. Besse, Vacuum VACUAV 0042-207X 10.1016/S0042-207X(01)00114-2 62, 27 (2001).
- (2001) Vacuum , vol.62 , pp. 27
- Segda, B.G.¹ Jacquet, M.² Besse, J.P.³

18
- 0000081968
- APPLAB 0003-6951 10.1063/1.125519
- T. M. Klein, D. Niu, W. S. Epling, W. Li, D. M. Maher, C. C. Hobbs, R. I. Hegde, I. J. R. Baumvol, and G. N. Parsons, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.125519 75, 4001 (1999).
- (1999) Appl. Phys. Lett. , vol.75 , pp. 4001
- Klein, T.M.¹ Niu, D.² Epling, W.S.³ Li, W.⁴ Maher, D.M.⁵ Hobbs, C.C.⁶ Hegde, R.I.⁷ Baumvol, I.J.R.⁸ Parsons, G.N.⁹

19
- 0028195235
- THSFAP 0040-6090 10.1016/0040-6090(94)90238-0
- Y.-C. Kim, H.-H. Park, J. S. Chun, and W.-J. Lee, Thin Solid Films THSFAP 0040-6090 10.1016/0040-6090(94)90238-0 237, 57 (1994).
- (1994) Thin Solid Films , vol.237 , pp. 57
- Kim, Y.-C.¹ Park, H.-H.² Chun, J.S.³ Lee, W.-J.⁴

20
- 0034668553
- PRBMDO 0163-1829 10.1103/PhysRevB.62.R13290
- B. W. Busch, W. H. Schulte, E. Garfunkel, T. Gustafsson, W. Qi, R. Nieh, and J. Lee, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.62.R13290 62, R13290 (2000).
- (2000) Phys. Rev. B , vol.62 , pp. 13290
- Busch, B.W.¹ Schulte, W.H.² Garfunkel, E.³ Gustafsson, T.⁴ Qi, W.⁵ Nieh, R.⁶ Lee, J.⁷

21
- 0000361018
- APPLAB 0003-6951 10.1063/1.126214
- B. H. Lee, L. Kang, R. Nieh, W.-J. Qi, and J. C. Lee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.126214 76, 1926 (2000).
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1926
- Lee, B.H.¹ Kang, L.² Nieh, R.³ Qi, W.-J.⁴ Lee, J.C.⁵

22
- 0002685168
- JESOAN 0013-4651 10.1149/1.1337607
- D. Landheer, J. A. Gupta, G. I. Sproule, J. P. McCaffrey, M. J. Graham, K. C. Yang, Z. H. Lu, and W. N. Lennard, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.1337607 148, G29 (2001).
- (2001) J. Electrochem. Soc. , vol.148 , pp. 29
- Landheer, D.¹ Gupta, J.A.² Sproule, G.I.³ McCaffrey, J.P.⁴ Graham, M.J.⁵ Yang, K.C.⁶ Lu, Z.H.⁷ Lennard, W.N.⁸

23
- 0015388068
- JACTAW 0002-7820 10.1111/j.1151-2916.1972.tb11336.x
- A. Kumar, D. Rajdev, and D. L. Douglass, J. Am. Ceram. Soc. JACTAW 0002-7820 10.1111/j.1151-2916.1972.tb11336.x 55, 439 (1972).
- (1972) J. Am. Ceram. Soc. , vol.55 , pp. 439
- Kumar, A.¹ Rajdev, D.² Douglass, D.L.³

24
- 79956027667
- APPLAB 0003-6951 10.1063/1.1519733
- H. Y. Yu, N. Wu, M. F. Li, C. Zhu, B. J. Cho, D. L. Kwong, C. H. Tung, J. S. Pan, J. W. Chai, W. D. Wang, D. Z. Chi, C. H. Ang, J. Z. Zheng, and S. Ramanathan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1519733 81, 3618 (2002).
- (2002) Appl. Phys. Lett. , vol.81 , pp. 3618
- Yu, H.Y.¹ Wu, N.² Li, M.F.³ Zhu, C.⁴ Cho, B.J.⁵ Kwong, D.L.⁶ Tung, C.H.⁷ Pan, J.S.⁸ Chai, J.W.⁹ Wang, W.D.¹⁰ Chi, D.Z.¹¹ Ang, C.H.¹² Zheng, J.Z.¹³ Ramanathan, S.¹⁴

25
- 0000969098
- JAPIAU 0021-8979 10.1063/1.370567
- U. Brossmann, R. Wurschum, U. Sodervall, and H.-E. Schaefer, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.370567 85, 7646 (1999).
- (1999) J. Appl. Phys. , vol.85 , pp. 7646
- Brossmann, U.¹ Wurschum, R.² Sodervall, U.³ Schaefer, H.-E.⁴

26
- 0036573608
- PRBMDO 0163-1829 10.1103/PhysRevB.65.174117
- A. S. Foster, F. Lopez Gejo, A. L. Shluger, and R. M. Nieminen, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.65.174117 65, 174117 (2002).
- (2002) Phys. Rev. B , vol.65 , pp. 174117
- Foster, A.S.¹ Lopez Gejo, F.² Shluger, A.L.³ Nieminen, R.M.⁴

27
- 0034390237
- JSSEFS 1432-8488 10.1007/s100080050202
- V. V. Kharton, A. A. Yaremchenko, E. N. Naumovich, and F. M. B. Marques, J. Solid State Electrochem. JSSEFS 1432-8488 10.1007/s100080050202 4, 243 (2000).
- (2000) J. Solid State Electrochem. , vol.4 , pp. 243
- Kharton, V.V.¹ Yaremchenko, A.A.² Naumovich, E.N.³ Marques, F.M.B.⁴

28
- 1642621158
- JAPIAU 0021-8979 10.1063/1.1713945
- B. E. Deal and A. S. Grove, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1713945 36, 3770 (1965).
- (1965) J. Appl. Phys. , vol.36 , pp. 3770
- Deal, B.E.¹ Grove, A.S.²

29
- 0033190153
- MIENEF 0167-9317 10.1016/S0167-9317(99)00341-X
- H. Itoh, M. Nagamine, H. Satake, and A. Toriumi, Microelectron. Eng. MIENEF 0167-9317 10.1016/S0167-9317(99)00341-X 48, 71 (1999).
- (1999) Microelectron. Eng. , vol.48 , pp. 71
- Itoh, H.¹ Nagamine, M.² Satake, H.³ Toriumi, A.⁴

30
- 3142749109
- JAPIAU 0021-8979 10.1063/1.1753080
- S. Ferrari and G. Scarel, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1753080 96, 144 (2004).
- (2004) J. Appl. Phys. , vol.96 , pp. 144
- Ferrari, S.¹ Scarel, G.²

31
- 31544477427
- JAPNDE 0021-4922 10.1143/JJAP.44.6131
- H. Shimizu, K. Kita, K. Kyuno, and A. Toriumi, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.44.6131 44, 6131 (2005).
- (2005) Jpn. J. Appl. Phys., Part 1 , vol.44 , pp. 6131
- Shimizu, H.¹ Kita, K.² Kyuno, K.³ Toriumi, A.⁴

32
- 33748296191
- JPCBFK 1089-5647 10.1021/jp061788w
- S. Ferrari and M. Fanciulli, J. Phys. Chem. B JPCBFK 1089-5647 10.1021/jp061788w 110, 14905 (2006).
- (2006) J. Phys. Chem. B , vol.110 , pp. 14905
- Ferrari, S.¹ Fanciulli, M.²

33
- 0001127799
- PRBMDO 0163-1829 10.1103/PhysRevB.60.1492
- I. J. R. Baumvol, C. Krug, F. C. Stedile, F. Gorris, and W. H. Schulte, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.60.1492 60, 1492 (1999).
- (1999) Phys. Rev. B , vol.60 , pp. 1492
- Baumvol, I.J.R.¹ Krug, C.² Stedile, F.C.³ Gorris, F.⁴ Schulte, W.H.⁵

34
- 85040205541
- McGraw-Hill, New York
- S. V. Pantankar, Numerical Heat Transfer and Fluid Flow (McGraw-Hill, New York, 1980), p. 25.
- (1980) Numerical Heat Transfer and Fluid Flow , pp. 25
- Pantankar, S.V.¹

35
- 0036732199
- PSSBBD 0370-1972 10.1002/1521-3951(200209)233:1<18::AID-PSSB18>3.0. CO;2-K
- C.-L. Liu, Phys. Status Solidi B PSSBBD 0370-1972 10.1002/1521- 3951(200209)233:1<18::AID-PSSB18>3.0.CO;2-K 233, 18 (2002).
- (2002) Phys. Status Solidi B , vol.233 , pp. 18
- Liu, C.-L.¹

36
- 0001528572
- PRBMDO 0163-1829 10.1103/PhysRevB.61.12992
- R. M. C. de Almeida, S. Gonçalves, I. J. R. Baumvol, and F. C. Stedile, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.61.12992 61, 12992 (2000).
- (2000) Phys. Rev. B , vol.61 , pp. 12992
- De Almeida, R.M.C.¹ Gonçalves, S.² Baumvol, I.J.R.³ Stedile, F.C.⁴

37
- 0019621326
- JESOAN 0013-4651 10.1149/1.2127220
- R. R. Razouk, L. N. Lie, and B. E. Deal, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.2127220 128, 2214 (1981).
- (1981) J. Electrochem. Soc. , vol.128 , pp. 2214
- Razouk, R.R.¹ Lie, L.N.² Deal, B.E.³

38
- 0037505687
- IEEEI/SEMI Advanced Semiconductor Manufacturing Conference
- L. Date, Z. M. Rittersma, D. Massoubre, Y. Ponomarev, F. Roozeboom, D. Pique, L. van-Autryve, S. Van Elshocht, and M. Caymax, IEEEI/SEMI Advanced Semiconductor Manufacturing Conference, 133 (2003).
- (2003) , pp. 133
- Date, L.¹ Rittersma, Z.M.² Massoubre, D.³ Ponomarev, Y.⁴ Roozeboom, F.⁵ Pique, D.⁶ Van-Autryve, L.⁷ Van Elshocht, S.⁸ Caymax, M.⁹

39
- 1242310378
- JAPNDE 0021-4922
- T. Nabatame, T. Yasuda, M. Nishizawa, M. Ikeda, T. Horikawa, and A. Toriumi, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 42, 7205 (2003).
- (2003) Jpn. J. Appl. Phys., Part 1 , vol.42 , pp. 7205
- Nabatame, T.¹ Yasuda, T.² Nishizawa, M.³ Ikeda, M.⁴ Horikawa, T.⁵ Toriumi, A.⁶

40
- 0037643635
- APPLAB 0003-6951 10.1063/1.1576293
- M. Kundu, N. Miyata, T. Nabatame, T. Horikawa, M. Ichikawa, and A. Toriumi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1576293 82, 3442 (2003).
- (2003) Appl. Phys. Lett. , vol.82 , pp. 3442
- Kundu, M.¹ Miyata, N.² Nabatame, T.³ Horikawa, T.⁴ Ichikawa, M.⁵ Toriumi, A.⁶

41
- 24344475299
- APPLAB 0003-6951 10.1063/1.1944206
- M. Park, J. Koo, J. Kim, H. Jeon, C. Bae, and C. Krug, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1944206 86, 252110 (2005).
- (2005) Appl. Phys. Lett. , vol.86 , pp. 252110
- Park, M.¹ Koo, J.² Kim, J.³ Jeon, H.⁴ Bae, C.⁵ Krug, C.⁶

42
- 33846058327
- APPLAB 0003-6951 10.1063/1.2425023
- R. Katamreddy, R. Inman, G. Jursich, A. Soulet, and C. Takoudis, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2425023 89, 262906 (2006).
- (2006) Appl. Phys. Lett. , vol.89 , pp. 262906
- Katamreddy, R.¹ Inman, R.² Jursich, G.³ Soulet, A.⁴ Takoudis, C.⁵

43
- 43449108116
- Ph.D. thesis, University of Illinois
- A. Roy Chowdhuri, Ph.D. thesis, University of Illinois, 2003.
- (2003)
- Roy Chowdhuri, A.¹

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