Electrical properties of MOCVD HfO2 dielectric layers with polysilicon gate electrodes for CMOS applications

IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

Volumn , Issue , 2003, Pages 133-136

  Date, L ^a   Rittersma, Z M ^c   Massoubre, D ^c   Ponomarev, Y ^c   Roozeboom, F ^c   Pique, D ^a   Van Autryve, L ^a   Van Elshocht, S ^b   Caymax, M ^b  

^a Applied Materials   (France)

^b IMEC   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Activation anneal; LPCVD poly; MOCVD HfO2; RTCVD poly

Indexed keywords

ANNEALING; CHEMICAL ACTIVATION; DEGRADATION; DIELECTRIC MATERIALS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOS CAPACITORS; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

ACTIVATION ANNEAL; GATE STACK; HAFNIUM DIOXIDE; POLYSILICON GATE ELECTRODES;

POLYSILICON;

EID: 0037505687     PISSN: 1523553X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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