Isotopic substitution of Si during thermal growth of ultrathin silicon-oxide films on Si(111) in O2

Physical Review B - Condensed Matter and Materials Physics

Volumn 60, Issue 3, 1999, Pages 1492-1495

  Baumvol, I J R ^a   Krug, C ^a   Stedile, F C ^a   Gorris, F ^b   Schulte, W H ^b  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001127799     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.1492     Document Type: Article

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