Suppression of parasitic Si substrate oxidation in HfO 2- ultrathin-Al 2O 3-Si structures prepared by atomic layer deposition

Applied Physics Letters

Volumn 86, Issue 25, 2005, Pages 1-3

  Park, Myungjin ^a,c   Koo, Jaehyoung ^a   Kim, Jinwoo ^a   Jeon, Hyeongtag ^a   Bae, Choelhwyi ^b   Krug, Cristiano ^b  

^a Hanyang University   (South Korea)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; PARASITIC OXIDATION; SUBSTRATE OXIDATION;

HAFNIUM COMPOUNDS; OXIDATION; PERMITTIVITY; RAPID THERMAL ANNEALING; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ULTRATHIN FILMS;

EID: 24344475299     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1944206     Document Type: Article

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