Controlling interfacial reactions between HfO2 and Si using ultrathin Al2O3 diffusion barrier layer

Applied Physics Letters

Volumn 89, Issue 26, 2006, Pages

  Katamreddy, Rajesh ^a   Inman, Ronald ^b   Jursich, Gregory ^b   Soulet, Axel ^b   Takoudis, Christos ^a  

^a 1120 Science and Engineering Offices   (United States)

^b AIR LIQUIDE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED (ALD); BARRIER LAYERS; INTERFACIAL REACTIONS; POSTDEPOSITION ANNEALING;

ALUMINA; ANNEALING; DIFFUSION; HIGH TEMPERATURE EFFECTS; SILICON; SURFACE CHEMISTRY; ULTRATHIN FILMS;

HAFNIUM COMPOUNDS;

EID: 33846058327     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2425023     Document Type: Article

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