High quality Ta2O5 gate dielectrics with Tox,eq < 10 angstrom

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 141-144

  Luan, H F ^a   Lee, S J ^a   Lee, C H ^a   Song, S C ^a   Mao, Y L ^a   Senzaki, Y ^a   Roberts, D ^a   Kwong, D L ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ANNEALING; CHEMICAL VAPOR DEPOSITION; GATES (TRANSISTOR); LEAKAGE CURRENTS; OXIDES; PERMITTIVITY; QUANTUM THEORY; SURFACE ROUGHNESS; TANTALUM COMPOUNDS; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

CAPACITANCE VOLTAGE CHARACTERISTICS; GATE DIELECTRICS; POST DEPOSITION ANNEAL; RAPID THERMAL PROCESSING; STRESS INDUCED LEAKAGE CURRENT; TANTALUM OXIDE; X RAY TRANSMISSION ELECTRON MICROSCOPY;

DIELECTRIC MATERIALS;

EID: 0033307456     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)