Diffusion reaction of oxygen in HfO2/SiO2/Si stacks

Journal of Physical Chemistry B

Volumn 110, Issue 30, 2006, Pages 14905-14910

  Ferrari, S ^a   Fanciulli, M ^a  

^a LABORATORIO MDM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; INTERFACES (MATERIALS); MOLECULAR DYNAMICS; OXIDATION; SECONDARY ION MASS SPECTROMETRY; SILICON;

ANNEALING TEMPERATURE; CHEMISORBED MOISTURE; OXIDATION MECHANISM; WET SILICON OXIDATION;

HAFNIUM COMPOUNDS;

EID: 33748296191     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp061788w     Document Type: Article

References (24)

1. Robertson, J. Eur. Phys. J.: Appl. Phys. 2004, 28, 265-291.
2. Kharton, V. V.; Yaremchenko, A. A.; Naumovich, E. N.; Marques, F. M. B. J. Solid State Electrochem. 2000, 4 (5), 243-266.
3. Foster, A. S.; Gejo, F. L.; Shluger, A. L.; Nieminen, R. M. Phys. Rev. B 2002, 65 (17), 174117/1-13.
4. Busch, B. W.; Schulte, W. H.; Garfunkel, E.; Gustafsson, T.; Qi, W.; Nieh, R.; Lee, J. Phys. Rev. B 2000, 62 (20), R13290-3.
5. Brossmann, U.; Wurschum, R.; Sodervall, U.; Schaefer, H.-E. J. Appl. Phys. 1999, 85 (11), 7646-7654.
6. Deal, B. E.; Grove, A. S. J. Appl. Phys. 1965, 36 (12), 3770-3778.
7. Ng, K. K.; Polito, W. J.; Ligenza, J. R. Appl. Phys. Lett. 1984, 44, 626.
8. Lu, H. C.; Gustafsson, T.; Gusev, E. P.; Garfunkel E. Appl. Phys. Lett. 1995, 67(12), 1742-1744.
9. Perriere, J.; Siejka, J.; Chang, R. P. H. J. Appl. Phys. 1984, 56 (10), 2716-2724.
10. Shimizu, K.; Kobayashi, K.; Skeldon, P.; Thompson, G. E.; Wood, G. C. Thin Solid Films 1997, 295, 156-161.
11. Ferrari, S.; Scarel, G. J. Appl. Phys. 2004, 96 (1), 144-149.
12. Wiemer, C.; Ferrari, S.; Fanciulli, M.; Pavia, G.; Lutterotti, L. Thin Solid Films 2004, 450/1, 134-137.
13. Miyata, N.; Ichikawa, M.; Nabatame, T.; Horikawa, T.; Toriumi, A. Jpn. J. Appl. Phys., Part 2 2003, 42 (2), L138-L140.
14. Yamamoto, K.; Asai, M.; Horii, S.; Miya, H.; Niwa, M. J. Vac. Sci. Technol., A 2003, 21 (4), 1033-1037.
15. Raghu, P.; Rana, N.; Yim, C.; Shero, E.; Shadman, F. J.Electrochem. Soc. 2003, 150, F186.
16. Rana, N.; Raghu, P.; Shero, E.; Shadman, F. Appl. Surf. Sci. 2003, 205 (1-4), 160-175.
17. Ferrari, S. Appl. Surf. Sci. 2004, 231-232, 609-613.
18. Bennett, J.; Gondran, C.; Sparks, C.; Hung, P. Y.; Hou, A. Appl. Surf. Sci. 2003, 203-204, 409-413.
19. Mikkelsen, J. C., Jr. Appl. Phys. Lett. 1981, 39 (11), 903-905.
20. Gavartin, J. L.; Shluger, A. L.; Foster, A. S.; Sushko, P. V. Nano and giga challenges in microelectronics; Elsevier: Amsterdam, The Netherlands, 2003.
21. Atkinson, A. Rev. Mod. Phys. 1985, 57 (2), 437-470.
22. Bongiorno, A.; Pasquarello, A. Phys. Rev. B 2004, 70 (19), 195312.
23. Hoshino, T.; Hata, M.; Neya, S.; Nishioka, Y.; Watanabe, T.; Tatsumura, K.; Ohdomari, I. Jpn. J. Appl. Phys. 2003, 42 (6a), 3560-3565.
24. Bastos, K.; Morais, J.; Miotti, L.; Pezzi, R.; Soares, G.; Baumvol, I.; Hegde, R.; Tseng, H.; Tobin, P. Appl. Phys. Lett. 2002, 81, 1669-1671.