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Volumn 10, Issue 5, 2004, Pages 275-279

Growth of hafnium aluminate thin films by liquid injection MOCVD using alkoxide precursors

(7) Marshall, Paul A a Potter, Richard J a Jones, Anthony C a,c Chalker, Paul R a Taylor, Stephen a Critchlow, Gary W b Rushworth, Simon A c

a UNIVERSITY OF LIVERPOOL (United Kingdom)

b LOUGHBOROUGH UNIVERSITY (United Kingdom)

c Epichem Oxides and Nitrides (United Kingdom)

Author keywords

Aluminum alkoxides; Hafnium alkoxides; Hafnium aluminate; Liquid injection MOCVD

Indexed keywords

DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; THICK FILMS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ALUMINUM ALKOXIDES; DIELECTRIC LAYERS; HAFNIUM ALUMINATE THIN FILMS;

HAFNIUM COMPOUNDS;

EID: 10444269479 PISSN: 09481907 EISSN: None Source Type: Journal
DOI: 10.1002/cvde.200306301 Document Type: Article

Times cited : (16)

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