Erratum: Atomic vapour deposition (AVD) of SrBi2Ta 2O9 using an all alkoxide precursor system (Journal of Crystal Growth (2004) 272 (778) DOI: 10.1016/j.jcrysgro.2004.08.109);Atomic vapour deposition (AVD) of SrBi2Ta2O 9 using an all alkoxide precursor

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 778-784

  Chalker, Paul R ^a   Potter, Richard J ^a   Roberts, John L ^a   Jones, Anthony C ^a,b   Smith, Lesley M ^b   Schumacher, Marcus ^c  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b Epichem Ltd   (United Kingdom)

^c AIXTRON AG   (Germany)

Author keywords

B1. Strontium bismuth tantalate; B1. Strontium tantalate; B2. Ferroelectric materials; BI. Alkoxide precursors; BI. Bismuth oxide

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; DEPOSITION; FERROELECTRIC MATERIALS; MICROELECTROMECHANICAL DEVICES; SEMICONDUCTOR SUPERLATTICES; THIN FILMS;

ALKOXIDE PRECURSORS; BISMUTH OXIDE; STRONTIUM BISMUTH TANTALATE; STRONTIUM TANTALATE;

STRONTIUM COMPOUNDS;

EID: 9944262833     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.01.093     Document Type: Erratum

References (21)

1. S.B. Zhang, X.Y. Guo, J.T. Xu, Ferroelectronics 232 (1999) 1055.
2. A. Gensbittel, A.F. Degardin, A.J. Kreisler, M. Guilloux-Viry, A. Perrin, P. Crozat, Ferroelectronics 288 (2003) 103.
3. G. Rosenman, D. Shur, Y.E. Krasik, A. Dunaevsky, J. Appl. Phys. 88 (11) (2000) 6109.
4. V. Bornand, P. Papet, Ferroelectronics 288 (2003) 187.
5. R. Ramesh, S. Aggarwal, O. Auciello, Mater. Sci. Eng. R 32 (6) (2001) 191.
6. C.A. Paz de Arauja, J.D. Cuchiaro, K.D. McMillan, M.C. Scott, J.F. Scott, Nature 347 (1995) 627.
7. H. Funakubo, K. Ishikawa, T. Watanabe, M. Mitsuya, N. Nukaga, Adv. Mater. Opt. Electron. 10 (2000) 193.
8. G.A. Smolenskii, V.A. Isupov, A.I. Agranovskara, Sov. Phys. Solid State 1 (1959) 149.
9. J.F. Roeder, B.C. Hendrix, F. Hintermeier, D.A. Desrochers, T.H. Baum, G. Bhandari, M. Chappius, P.C. Van Buskirk, C. Dehm, E. Fritsch, N. Nagel, H. Wendt, H. Cerva, W. Honlein, C. Mazure, J. Eur. Ceram. Soc. 19 (1999) 1463.
10. C. Isobe, T. Ami, K. Hironaka, K. Watanabe, M. Sugiyama, N. Nagel, K. Katori, Y. Ikeda, C.D. Gutleben, M. Tanaka, H. Yaamoto, H. Yagi, Integr. Ferroelectr. 14 (1997) 95.
11. M.J. Crosbie, P.J. Wright, A.C. Jones, T.J. Leedham, P. O'Brien, G.W. Critchlow, Chem. Vap. Depos. 5 (1999) 9.
12. W.C. Shin, K.J. Choi, E.S. Choi, C.M. Park, S.G. Yoon, Integer. Ferroelectr. 30 (2000) 27.
13. H. Kodakura, Y. Okuhara, M. Mitsuya, H. Funakubo, Chem. Vap. Depos. 6 (2000) 225.
14. P.A. Williams, A.C. Jones, M.J. Crosbie, P.J. Wright, J.F. Bickley, A. Steiner, H.O. Davies, T.J. Leedham, G.W. Critchlow, Chem. Vap. Depos. 7 (2001) 205.
15. T. Siegrist, R.J. Cava, J.J. Krajewski, Mater. Res. Bull. 32 (1997) 881.
16. S.A. Ivanov, R. Tellgren, H. Rundlof, V.G. Orlov, Powder Diffr. 16 (2001) 227.
17. K. Amanuma, T. Hase, Y. Miyasaka, Mater. Res. Soc. Symp. Proc. 361 (1995) 21.
18. H. Watanabe, T. Mihara, H. Yoshimori, C.A. Araujo, Jpn. J. Appl. Phys. 34 (1995) 5240.
19. T. Watanabe, H. Funakubo, Jpn. J. Appl. Phys. 39 (2000) 5211.
20. K. Saito, M. Masatoshi, N. Nukaga, I. Yamaji, T. Akai, H. Funakubo, Jpn. J. Appl. Phys. 39 (2000) 5489.
21. K. Miura, App. Phys. Lett. 80 (2002) 2967.