MOCVD of high-k dielectrics, tantalum nitride and copper from directly injected liquid precursors

Advanced Functional Materials

Volumn 10, Issue 3-5, 2000, Pages 93-103

  Senzaki, Yoshihide ^a,b   Hochberg, Arthur K ^a   Norman, John A T ^a  

^a Schumacher   (United States)

^b Thermal Systems   (United States)

Author keywords

Copper CVD; Direct liquid injection; High k dielectrics; MOCVD; Ta2O5; Tantalum nitride

Indexed keywords

COPPER; DIELECTRIC MATERIALS; DOPING (ADDITIVES); MICROELECTRONICS; TANTALUM COMPOUNDS; THERMAL EFFECTS; THIN FILMS;

DIRECTLY INJECTED LIQUID PRECURSORS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0034180052     PISSN: 1616301X     EISSN: None     Source Type: Journal    
DOI: 10.1002/1099-0712(200005/10)10:3/5<93::aid-amo403>3.0.co;2-q     Document Type: Article

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