메뉴 건너뛰기




Volumn , Issue , 2005, Pages 649-692

Modeling and simulation

Author keywords

[No Author keywords available]

Indexed keywords


EID: 33748082058     PISSN: None     EISSN: None     Source Type: Book    
DOI: None     Document Type: Chapter
Times cited : (11)

References (98)
  • 1
    • 0032666685 scopus 로고    scopus 로고
    • Simulation of optical lithography in optics and optoelectronics — theory, devices and applications
    • A. Erdmann and W. Henke, Simulation of optical lithography in optics and optoelectronics — theory, devices and applications, Proc. SPIE, 3729, 480 (1999).
    • (1999) Proc. SPIE , vol.3729 , pp. 480
    • Erdmann, A.1    Henke, W.2
  • 5
    • 0031343511 scopus 로고    scopus 로고
    • High numerical aperture effects in photoresist
    • D.G. Flagello and T.D. Milster, High numerical aperture effects in photoresist, Appl. Opt., 36, 8944 (1997).
    • (1997) Appl. Opt. , vol.36 , pp. 8944
    • Flagello, D.G.1    Milster, T.D.2
  • 6
    • 84941533449 scopus 로고
    • Distribution of light at and near the focus of high numerical aperture objectives
    • M. Mansuripur, Distribution of light at and near the focus of high numerical aperture objectives, J. Opt. Soc. Am., A3, 2086 (1986).
    • (1986) J. Opt. Soc. Am. , vol.A3 , pp. 2086
    • Mansuripur, M.1
  • 7
    • 0036416491 scopus 로고    scopus 로고
    • Hopkins vs. Abbe, a lithography simulation matching study
    • R. Schlief, A. Liebchen, and J.F. Chen, Hopkins vs. Abbe, a lithography simulation matching study, Proc. SPIE, 4691, 1106 (2002).
    • (2002) Proc. SPIE , vol.4691 , pp. 1106
    • Schlief, R.1    Liebchen, A.2    Chen, J.F.3
  • 8
    • 0028515483 scopus 로고
    • Phase-shifting masks for optical microlithography: Automated design and mask requirements
    • Y.C. Pati and T. Kailath, Phase-shifting masks for optical microlithography: automated design and mask requirements, J. Opt. Soc. Am., A11, 2438 (1994).
    • (1994) J. Opt. Soc. Am. , vol.A11 , pp. 2438
    • Pati, Y.C.1    Kailath, T.2
  • 9
    • 0029492542 scopus 로고
    • Fast sparse aerial image calculation for opc
    • N. Cobb and A. Zakhor, Fast sparse aerial image calculation for OPC, Proc. SPIE, 2621, 534 (1995).
    • (1995) Proc. SPIE , vol.2621 , pp. 534
    • Cobb, N.1    Zakhor, A.2
  • 10
    • 0036413061 scopus 로고    scopus 로고
    • Quantification of image quality
    • P. Tat and A.K. Wong, Quantification of image quality, Proc. SPIE, 4691, 169 (2002).
    • (2002) Proc. SPIE , vol.4691 , pp. 169
    • Tat, P.1    Wong, A.K.2
  • 11
    • 0024055901 scopus 로고
    • Simulation of focus effects in photolithography
    • D.A. Bernard, Simulation of focus effects in photolithography, IEEE Trans. Semicond. Manufact., 1, 85 (1988).
    • (1988) IEEE Trans. Semicond. Manufact. , vol.1 , pp. 85
    • Bernard, D.A.1
  • 12
  • 13
    • 84958480931 scopus 로고
    • Modeling high numerical aperture lithography
    • M.S. Yeung, Modeling high numerical aperture lithography, Proc. SPIE, 922, 149 (1988).
    • (1988) Proc. SPIE , vol.922 , pp. 149
    • Yeung, M.S.1
  • 14
    • 85057473698 scopus 로고
    • Simulation of light propagation in optical linear and nonlinear layers by finite difference beam propagation and other methods
    • A. Erdmann and W. Henke, Simulation of light propagation in optical linear and nonlinear layers by finite difference beam propagation and other methods, J. Vac. Sci. Technol., 14, 3743 (1995).
    • (1995) J. Vac. Sci. Technol. , vol.14 , pp. 3743
    • Erdmann, A.1    Henke, W.2
  • 17
    • 0034852070 scopus 로고    scopus 로고
    • Towards a universal resist dissolution model for lithography simulation
    • S. Robertson, C. Mack, and M. Maslow, Towards a universal resist dissolution model for lithography simulation, Proc. SPIE, 4404, 111 (2001).
    • (2001) Proc. SPIE , vol.4404 , pp. 111
    • Robertson, S.1    Mack, C.2    Maslow, M.3
  • 18
    • 77953246851 scopus 로고
    • Enhanced lumped parameter model for photolithography
    • C.A. Mack, Enhanced lumped parameter model for photolithography, Proc. SPIE, 2197, 501 (1994).
    • (1994) Proc. SPIE , vol.2197 , pp. 501
    • Mack, C.A.1
  • 19
    • 0030314809 scopus 로고    scopus 로고
    • Approximate models for resist processing effects
    • T.A. Brunner and R.A. Ferguson, Approximate models for resist processing effects, Proc. SPIE, 2726, 198 (1996).
    • (1996) Proc. SPIE , vol.2726 , pp. 198
    • Brunner, T.A.1    Ferguson, R.A.2
  • 20
    • 0036414478 scopus 로고    scopus 로고
    • Assesment of different simplified resist models
    • D. Fuard, M. Besacier, and P. Schiavone, Assesment of different simplified resist models, Proc. SPIE, 4691, 1266 (2002).
    • (2002) Proc. SPIE , vol.4691 , pp. 1266
    • Fuard, D.1    Besacier, M.2    Schiavone, P.3
  • 21
    • 0141500008 scopus 로고    scopus 로고
    • Enhanced processing: Sub-50 nm features with 0.8 micron dof using a binary reticle
    • D. van Steenwickel and J.H. Lammers, Enhanced processing: sub-50 nm features with 0.8 micron DOF using a binary reticle, Proc. SPIE, 5039 (2003) (in print).
    • (2003) Proc. SPIE , pp. 5039
    • Van Steenwickel, D.1    Lammers, J.H.2
  • 22
    • 84957321946 scopus 로고
    • The exposure-defocus forest
    • B.J. Lin, The exposure-defocus forest, Jpn. J. Appl. Phys., 33, 6756 (1994).
    • (1994) Jpn. J. Appl. Phys. , vol.33 , pp. 6756
    • Lin, B.J.1
  • 24
    • 0001002843 scopus 로고    scopus 로고
    • Using advanced simulation to aid microlithography development
    • D.C. Cole, E. Barouch, E.W. Conrad, and M. Yeung, Using advanced simulation to aid microlithography development, Proc. IEEE, 89, 1194 (2001).
    • (2001) Proc. IEEE , vol.89 , pp. 1194
    • Cole, D.C.1    Barouch, E.2    Conrad, E.W.3    Yeung, M.4
  • 25
    • 0019586874 scopus 로고
    • Rigorous coupled-wave analysis of planar grating diffraction
    • M.G. Moharam and T.K. Gaylord, Rigorous coupled-wave analysis of planar grating diffraction, J. Opt. Soc. Am, 71, 811 (1981).
    • (1981) J. Opt. Soc. Am , vol.71 , pp. 811
    • Moharam, M.G.1    Gaylord, T.K.2
  • 26
    • 85057495556 scopus 로고    scopus 로고
    • Rigorous electromagnetic simulation of euv-mask defects: Influence of the absorber properties
    • P. Schiavone, G. Granet, and J.Y. Robic, Rigorous electromagnetic simulation of EUV-mask defects: influence of the absorber properties, Microelectronic Eng., 57–58, 497 (2001).
    • (2001) Microelectronic Eng. , vol.497 , pp. 57-58
    • Schiavone, P.1    Granet, G.2    Robic, J.Y.3
  • 27
    • 0141730813 scopus 로고    scopus 로고
    • Three-dimensional photolithography simulator including rigorous non-planar exposure simulation for off axis illumination
    • H. Kirchhauer and S. Selberherr, Three-dimensional photolithography simulator including rigorous non-planar exposure simulation for off axis illumination, Proc. SPIE, 3334, 764 (1998).
    • (1998) Proc. SPIE , vol.3334 , pp. 764
    • Kirchhauer, H.1    Selberherr, S.2
  • 28
    • 0034757240 scopus 로고    scopus 로고
    • Quantifying euv imaging tolerances for the 70, 50, and 35 nm nodes through rigorous aerial image simulations
    • C. Krautschik, M. Ito, I. Nishiyama, and T. Mori, Quantifying EUV imaging tolerances for the 70, 50, and 35 nm nodes through rigorous aerial image simulations, Proc. SPIE, 4343, 524 (2001).
    • (2001) Proc. SPIE , vol.4343 , pp. 524
    • Krautschik, C.1    Ito, M.2    Nishiyama, I.3    Mori, T.4
  • 29
    • 0020191966 scopus 로고
    • The theory of optical edge detection and imaging of thick layers
    • D. Nyyssonen, The theory of optical edge detection and imaging of thick layers, J. Opt. Soc. Am., 1425 (1982).
    • (1982) J. Opt. Soc. Am. , pp. 1425
    • Nyyssonen, D.1
  • 30
    • 0027656350 scopus 로고
    • Calculation of one-dimensional lithographic aerial images using the vector theory
    • C.M. Yuan, Calculation of one-dimensional lithographic aerial images using the vector theory, IEEE Trans. Electron Devices, 40, 1604 (1993).
    • (1993) IEEE Trans. Electron Devices , vol.40 , pp. 1604
    • Yuan, C.M.1
  • 31
    • 0030288036 scopus 로고    scopus 로고
    • Efficient and rigorous three-dimensional model for optical lithography simulation
    • K. Lucas, H. Tanabe, and A.J. Strojwas, Efficient and rigorous three-dimensional model for optical lithography simulation, J. Opt. Soc. Am., A13, 2187 (1996).
    • (1996) J. Opt. Soc. Am. , vol.A13 , pp. 2187
    • Lucas, K.1    Tanabe, H.2    Strojwas, A.J.3
  • 32
    • 0141459707 scopus 로고    scopus 로고
    • Rigorous euv-mask simulator using 2d and 3d waveguide methods
    • Z. Zhu, K. Lucas, J.L. Cobb, S.D. Hector, and A.J. Strojwas, Rigorous EUV-mask simulator using 2D and 3D waveguide methods, Proc. SPIE, 5037 (2003) (in print).
    • (2003) Proc. SPIE , pp. 5037
    • Zhu, Z.1    Lucas, K.2    Cobb, J.L.3    Hector, S.D.4    Strojwas, A.J.5
  • 33
    • 85076465140 scopus 로고
    • Some image modeling issues for i-line, 5x phase shifting masks
    • G.L. Wojcik, J. Mould, R. Ferguson, R. Martino, and K.K. Low, Some image modeling issues for i-line, 5x phase shifting masks, Proc. SPIE, 2197, 455 (1994).
    • (1994) Proc. SPIE , vol.2197 , pp. 455
    • Wojcik, G.L.1    Mould, J.2    Ferguson, R.3    Martino, R.4    Low, K.K.5
  • 34
    • 85057460882 scopus 로고    scopus 로고
    • www.fdtd.org, www.borg.umn.edu/toyfdtd.
  • 39
    • 84894021661 scopus 로고
    • Numerical solution of initial boundary value problems involving maxwell's equations in isotroptic media
    • K.S. Yee, Numerical solution of initial boundary value problems involving Maxwell's equations in isotroptic media, IEEE Trans. Antennas Propagation, 14, 302 (1966).
    • (1966) IEEE Trans. Antennas Propagation , vol.14 , pp. 302
    • Yee, K.S.1
  • 40
    • 84957493750 scopus 로고
    • Calculation of light scatter from structures on silicon surfaces
    • G.L. Wojcik, D.K. Vaughan, and L. Galbraith, Calculation of light scatter from structures on silicon surfaces, Proc. SPIE, 774, 21 (1987).
    • (1987) Proc. SPIE , vol.774 , pp. 21
    • Wojcik, G.L.1    Vaughan, D.K.2    Galbraith, L.3
  • 41
    • 85057449570 scopus 로고    scopus 로고
    • www.eecs.berkeley.edu/~neureuth
  • 42
    • 85075724543 scopus 로고
    • Edge effects in phase shifting masks for 0.25 |xm lithography
    • A.K. Wong and A.R. Neureuther, Edge effects in phase shifting masks for 0.25 |xm lithography, Proc. SPIE, 1809, 222 (1992).
    • (1992) Proc. SPIE , vol.1809 , pp. 222
    • Wong, A.K.1    Neureuther, A.R.2
  • 43
    • 0028447735 scopus 로고
    • Mask topography effects in projection printing of phase- shifting masks
    • A.K. Wong and A.R. Neureuther, Mask topography effects in projection printing of phase- shifting masks, IEEE Trans. Electron Devices, 41, 895 (1994).
    • (1994) IEEE Trans. Electron Devices , vol.41 , pp. 895
    • Wong, A.K.1    Neureuther, A.R.2
  • 44
    • 0011257412 scopus 로고    scopus 로고
    • Lithography simulation employing rigorous solutions to maxwell's equations
    • R. Gordon and C.A. Mack, Lithography simulation employing rigorous solutions to Maxwell's equations, Proc. SPIE, 3334, 176 (1998).
    • (1998) Proc. SPIE , vol.3334 , pp. 176
    • Gordon, R.1    Mack, C.A.2
  • 45
    • 0033682543 scopus 로고    scopus 로고
    • Rigorous diffraction analysis for future mask technology
    • A. Erdmann and C.H. Friedrich, Rigorous diffraction analysis for future mask technology, Proc. SPIE, 4000, 684 (2000).
    • (2000) Proc. SPIE , vol.4000 , pp. 684
    • Erdmann, A.1    Friedrich, C.H.2
  • 46
    • 85057500908 scopus 로고    scopus 로고
    • www.sigma-c.com.
  • 47
    • 85057453818 scopus 로고    scopus 로고
    • www.panoramictech.com.
  • 48
    • 85057480928 scopus 로고    scopus 로고
    • www.kla-tencor.com/products/promax_2d/promax_2d.html.
  • 49
    • 28044459877 scopus 로고
    • A perfectly matched layer for the absorption of electromagnetic waves
    • J.P. Berenger, A perfectly matched layer for the absorption of electromagnetic waves, J. Computational Phys., 14, 185-200 (1994).
    • (1994) J. Computational Phys , vol.14 , pp. 185-200
    • Berenger, J.P.1
  • 50
    • 85057494904 scopus 로고    scopus 로고
    • www.rit.edu/~635dept5.
  • 51
    • 85057463138 scopus 로고    scopus 로고
    • www-cxro.lbl.gov/optical_constants.
  • 54
    • 0033720546 scopus 로고    scopus 로고
    • Modeling oblique incidence effects in photomasks
    • T.V. Pistor, A.R. Neureuther, and R.J. Socha, Modeling oblique incidence effects in photomasks, Proc. SPIE, 4000, 228 (2000).
    • (2000) Proc. SPIE , vol.4000 , pp. 228
    • Pistor, T.V.1    Neureuther, A.R.2    Socha, R.J.3
  • 55
    • 0036413372 scopus 로고    scopus 로고
    • Enhancements in rigorous simulation of light diffraction from phase shift masks
    • A. Erdmann and N. Kachwala, Enhancements in rigorous simulation of light diffraction from phase shift masks, Proc. SPIE, 4691, 1156 (2002).
    • (2002) Proc. SPIE , vol.4691 , pp. 1156
    • Erdmann, A.1    Kachwala, N.2
  • 56
    • 0034428088 scopus 로고    scopus 로고
    • Asymmetric properties of the aerial image in extreme ultraviolet lithography
    • K. Otaki, Asymmetric properties of the aerial image in extreme ultraviolet lithography, Jpn. J. Appl. Phys. 39, 6819 (2000).
    • (2000) Jpn. J. Appl. Phys. , vol.39 , pp. 6819
    • Otaki, K.1
  • 57
    • 0033698626 scopus 로고    scopus 로고
    • Deducing aerial image behavior from aims data
    • R. Gordon, D.G. Flagello, and M. McCallum, Deducing aerial image behavior from AIMS data, Proc. SPIE, 4000, 734 (2000).
    • (2000) Proc. SPIE , vol.4000 , pp. 734
    • Gordon, R.1    Flagello, D.G.2    McCallum, M.3
  • 59
    • 0030314912 scopus 로고    scopus 로고
    • Alternate rigorous method for photolithographic simulation based on profile sampling
    • B.H. Kleemann, J. Bischoff, and A.K. Wong, Alternate rigorous method for photolithographic simulation based on profile sampling, Proc. SPIE, 2726, 334 (1996).
    • (1996) Proc. SPIE , vol.2726 , pp. 334
    • Kleemann, B.H.1    Bischoff, J.2    Wong, A.K.3
  • 60
    • 0035759070 scopus 로고    scopus 로고
    • Simplified models for edge transitions in rigorous mask modeling
    • K. Adam and A.R. Neureuther, Simplified models for edge transitions in rigorous mask modeling, Proc. SPIE, 4346, 331 (2001).
    • (2001) Proc. SPIE , vol.4346 , pp. 331
    • Adam, K.1    Neureuther, A.R.2
  • 61
    • 3843137666 scopus 로고    scopus 로고
    • Domain decomposition methods for the rapid electromagnetic simulation of photomask scattering
    • K. Adam and A.R. Neureuther, Domain decomposition methods for the rapid electromagnetic simulation of photomask scattering, J. Microlithography, Microfabrication, Microsystems, 1, 253 (2002).
    • (2002) J. Microlithography, Microfabrication, Microsystems , vol.1 , pp. 253
    • Adam, K.1    Neureuther, A.R.2
  • 62
    • 0034318558 scopus 로고    scopus 로고
    • Extreme ultraviolett mask defect simulation: Low profile defects
    • T.V. Pistor, Y. Deng, and A.R. Neureuther, Extreme ultraviolett mask defect simulation: low profile defects, J. Vac. Sci. Technol. B. 18, 2926 (2000).
    • (2000) J. Vac. Sci. Technol. B. , vol.18 , pp. 2926
    • Pistor, T.V.1    Deng, Y.2    Neureuther, A.R.3
  • 64
    • 85057457381 scopus 로고    scopus 로고
    • Fast rigorous three-dimensional mask diffraction simulation using battle-lemarie wavelet-based multiresolution time-domain method
    • M.S. Yeung, Fast rigorous three-dimensional mask diffraction simulation using Battle-Lemarie wavelet-based multiresolution time-domain method, Proc. SPIE, 5040 (2003) (in print).
    • (2003) Proc. SPIE , pp. 5040
    • Yeung, M.S.1
  • 66
    • 85075596215 scopus 로고
    • Polarization effects in mask transmission
    • A.K. Wong and A.R. Neureuther, Polarization effects in mask transmission, Proc. SPIE, 1674, 193 (1992).
    • (1992) Proc. SPIE , vol.1674 , pp. 193
    • Wong, A.K.1    Neureuther, A.R.2
  • 67
    • 85076487013 scopus 로고
    • Examination of polarization and edge effects in photolithographic masks using three-dimensional rigorous simulation
    • A.K. Wong and A.R. Neureuther, Examination of polarization and edge effects in photolithographic masks using three-dimensional rigorous simulation, Proc. SPIE, 2197, 521 (1994).
    • (1994) Proc. SPIE , vol.2197 , pp. 521
    • Wong, A.K.1    Neureuther, A.R.2
  • 68
    • 0034258866 scopus 로고    scopus 로고
    • Limitation of the kirchhoff boundary conditions for aerial image simulation in 157-nm optical lithography
    • M.S. Yeung and E. Barouch, Limitation of the Kirchhoff boundary conditions for aerial image simulation in 157-nm optical lithography, IEEE Electron Device Lett., 21, 385 (2000).
    • (2000) IEEE Electron Device Lett. , vol.21 , pp. 385
    • Yeung, M.S.1    Barouch, E.2
  • 69
    • 0942293350 scopus 로고    scopus 로고
    • The mef revisited: Low k1 effects versus mask topography effects
    • C. Pierrat and A.K. Wong, The MEF revisited: low k1 effects versus mask topography effects, Proc. SPIE, 5040 (2003) (in print).
    • (2003) Proc. SPIE , pp. 5040
    • Pierrat, C.1    Wong, A.K.2
  • 71
    • 0001311873 scopus 로고
    • Exposure characteristics of alternate aperture phase-shifting masks fabricated using a subtractive process
    • R. Kostelak, C. Pierrat, J. Garofalo, and S. Vaidya, Exposure characteristics of alternate aperture phase-shifting masks fabricated using a subtractive process, J. Vac. Sci. Technol. B., 10, 3055 (1992).
    • (1992) J. Vac. Sci. Technol. B. , vol.10 , pp. 3055
    • Kostelak, R.1    Pierrat, C.2    Garofalo, J.3    Vaidya, S.4
  • 72
    • 85076258468 scopus 로고
    • Phase-shifting mask topography effects on lithographic image quality
    • C. Pierrat, A.K. Wong, and S. Vaidya, Phase-shifting mask topography effects on lithographic image quality, Proc. SPIE, 1927, 28 (1993).
    • (1993) Proc. SPIE , vol.1927 , pp. 28
    • Pierrat, C.1    Wong, A.K.2    Vaidya, S.3
  • 74
    • 85057505506 scopus 로고    scopus 로고
    • The impact of mask topography and resist effects on optical proximity correction in advanced alternating phase shift process
    • M. Cheng, B. Ho, and D. Guenther, The impact of mask topography and resist effects on optical proximity correction in advanced alternating phase shift process, Proc. SPIE, 5040 (2003) (in print).
    • (2003) Proc. SPIE , pp. 5040
    • Cheng, M.1    Ho, B.2    Guenther, D.3
  • 75
    • 0032296926 scopus 로고    scopus 로고
    • Design and analysis of manufacturable alternating phase-shifting masks
    • R. Gordon, C.A. Mack, and J.S. Petersen, Design and analysis of manufacturable alternating phase-shifting masks, Proc. SPIE, 3546, 606 (1998).
    • (1998) Proc. SPIE , vol.3546 , pp. 606
    • Gordon, R.1    Mack, C.A.2    Petersen, J.S.3
  • 76
    • 0035759130 scopus 로고    scopus 로고
    • Scaa mask exposures and phase phirst design for 110 nm and below
    • M. Levenson, T. Ebihara, and M. Yamachika, SCAA mask exposures and Phase Phirst Design for 110 nm and below, Proc. SPIE, 4346, 817 (2001).
    • (2001) Proc. SPIE , vol.4346 , pp. 817
    • Levenson, M.1    Ebihara, T.2    Yamachika, M.3
  • 77
    • 0035760047 scopus 로고    scopus 로고
    • Topography effects and wave aberrations in advanced psm-technology
    • A. Erdmann, Topography effects and wave aberrations in advanced PSM-technology, Proc. SPIE, 4346, 345 (2001).
    • (2001) Proc. SPIE , vol.4346 , pp. 345
    • Erdmann, A.1
  • 78
    • 0033684522 scopus 로고    scopus 로고
    • Impact of high order aberrations on the performance of the aberration monitor
    • P. Dirksen, C. Juffermans, A. Engelen, P. de Bisschop, and H. Muellerke, Impact of high order aberrations on the performance of the aberration monitor, Proc. SPIE, 4000, 9 (2000).
    • (2000) Proc. SPIE , vol.4000 , pp. 9
    • Dirksen, P.1    Juffermans, C.2    Engelen, A.3    De Bisschop, P.4    Muellerke, H.5
  • 79
    • 0141458734 scopus 로고
    • Effects of absorber topography and multilayer coating defects on reflective masks for soft x-ray/euv projection lithography
    • K.B. Nguyen, A.K. Wong, A.R. Neureuther, and D.T. Attwood, Effects of absorber topography and multilayer coating defects on reflective masks for soft x-ray/EUV projection lithography, Proc. SPIE, 1924, 418 (1993).
    • (1993) Proc. SPIE , vol.1924 , pp. 418
    • Nguyen, K.B.1    Wong, A.K.2    Neureuther, A.R.3    Attwood, D.T.4
  • 80
    • 0012084015 scopus 로고    scopus 로고
    • Rigorous simulation of mask corner effects in extreme ultraviolet lithography
    • T.V. Pistor, K. Adam, and A. Neureuther, Rigorous simulation of mask corner effects in extreme ultraviolet lithography, J. Vac. Sci. Technol. B., 16, 3449 (1998).
    • (1998) J. Vac. Sci. Technol. B. , vol.16 , pp. 3449
    • Pistor, T.V.1    Adam, K.2    Neureuther, A.3
  • 81
    • 0032672992 scopus 로고    scopus 로고
    • Mask topography simulation for euv-lithography
    • R. Gordon and C.A. Mack, Mask topography simulation for EUV-lithography, Proc. SPIE, 3676, 283 (1999).
    • (1999) Proc. SPIE , vol.3676 , pp. 283
    • Gordon, R.1    Mack, C.A.2
  • 82
    • 0141501326 scopus 로고    scopus 로고
    • Efficient simulation of light diffraction from 3-dimensional euv-masks using field decomposition techniques
    • A. Erdmann, C.K. Kalus, T. Schmoller, and A. Wolter, Efficient simulation of light diffraction from 3-dimensional EUV-masks using field decomposition techniques, Proc. SPIE, 5037, 482 (2003).
    • (2003) Proc. SPIE , vol.5037 , pp. 482
    • Erdmann, A.1    Kalus, C.K.2    Schmoller, T.3    Wolter, A.4
  • 84
    • 0034769038 scopus 로고    scopus 로고
    • The impact of euv mask phase response on the asymmetry of bossung curves as predicted by rigorous euv mask simulations
    • C. Krautschik, M. Ito, I. Nishiyama, and K. Otaki, The impact of EUV mask phase response on the asymmetry of Bossung curves as predicted by rigorous EUV mask simulations, Proc. SPIE, 4343, 392 (2001).
    • (2001) Proc. SPIE , vol.4343 , pp. 392
    • Krautschik, C.1    Ito, M.2    Nishiyama, I.3    Otaki, K.4
  • 85
    • 0009155726 scopus 로고    scopus 로고
    • Multilayer-coating-induced aberrations in extreme-ultraviolet lithography optics
    • C. Liang, M. R. Descour, J. M. Sasian, and S. A. Lerner, Multilayer-coating-induced aberrations in extreme-ultraviolet lithography optics, Appl. Opt., 40, 129 (2001).
    • (2001) Appl. Opt. , vol.40 , pp. 129
    • Lerner, S.A.1
  • 86
    • 0035768220 scopus 로고    scopus 로고
    • Understanding bossung curve asymmetry and focus shift effect in euv lithography
    • P.Y. Yan, Understanding Bossung curve asymmetry and focus shift effect in EUV lithography, Proc. SPIE, 4562, 279 (2001).
    • (2001) Proc. SPIE , vol.4562 , pp. 279
    • Yan, P.Y.1
  • 87
    • 0036381345 scopus 로고    scopus 로고
    • Impact of euv light scatter on cd control as a result of mask density changes
    • C. Krautschik, M. Ito, I. Nishiyama, and S. Okaszaki, Impact of EUV light scatter on CD control as a result of mask density changes, Proc. SPIE, 4688, 289 (2003).
    • (2003) Proc. SPIE , vol.4688 , pp. 289
    • Krautschik, C.1    Ito, M.2    Nishiyama, I.3    Okaszaki, S.4
  • 88
    • 0036123546 scopus 로고    scopus 로고
    • Effects of multilayer mask roughness on extreme ultraviolet lithography
    • Y. Deng, T. Pistor, and A.R. Neureuther, Effects of multilayer mask roughness on extreme ultraviolet lithography, J. Vac. Sci. Technol. B., 20, 344 (2002).
    • (2002) J. Vac. Sci. Technol. B. , vol.20 , pp. 344
    • Deng, Y.1    Pistor, T.2    Neureuther, A.R.3
  • 89
    • 0021625812 scopus 로고
    • An analysis of pellicle parameters for step-and-repeat projection
    • A. Flamholz, An analysis of pellicle parameters for step-and-repeat projection, Proc. SPIE, 470, 138 (1984).
    • (1984) Proc. SPIE , vol.470 , pp. 138
    • Flamholz, A.1
  • 90
    • 0036412877 scopus 로고    scopus 로고
    • Aerial image simulations of soft and phase defects in 193 nm lithography for 100 nm node
    • F. Driessen, P. van Aldrichem, V. Philipsen, R. Jockheere, H.Y. Liu, and L. Karklin, Aerial image simulations of soft and phase defects in 193 nm lithography for 100 nm node, Proc. SPIE, 4691, 1180 (2002).
    • (2002) Proc. SPIE , vol.4691 , pp. 1180
    • Driessen, F.1    Van Aldrichem, P.2    Philipsen, V.3    Jockheere, R.4    Liu, H.Y.5    Karklin, L.6
  • 91
    • 0027005169 scopus 로고
    • Detection and printability of shifter defects in phase shifting masks ii: Defocus characteristics
    • H. Watanabe, E. Suguira, T. Imoriya, and M. Inoue, Detection and printability of shifter defects in phase shifting masks II: defocus characteristics, Jpn. J. Appl. Phys., 31B, 4155 (1992).
    • (1992) Jpn. J. Appl. Phys. , vol.31B , pp. 4155
    • Watanabe, H.1    Suguira, E.2    Imoriya, T.3    Inoue, M.4
  • 92
    • 0029214182 scopus 로고
    • The role of illumination and thin film layers on the printability of defects
    • R. Socha and A. Neureuther, The role of illumination and thin film layers on the printability of defects, Proc. SPIE, 2440, 532 (1995).
    • (1995) Proc. SPIE , vol.2440 , pp. 532
    • Socha, R.1    Neureuther, A.2
  • 93
    • 0033690616 scopus 로고    scopus 로고
    • Alternating psm defect printability for 100 nm krf lithography
    • J. Kim, W.P. Mo, R. Gordon, and A. Williams, Alternating PSM defect printability for 100 nm KrF lithography, Proc. SPIE, 3998, 308 (2000).
    • (2000) Proc. SPIE , vol.3998 , pp. 308
    • Kim, J.1    Mo, W.P.2    Gordon, R.3    Williams, A.4
  • 94
    • 0141609989 scopus 로고    scopus 로고
    • Demain decomposition methods for simulation of printing and inspection of phase defects
    • M. Lam, K. Adam, and A. Neureuther, Demain decomposition methods for simulation of printing and inspection of phase defects, Proc. SPIE, 5040, 1492 (2003).
    • (2003) Proc. SPIE , vol.5040 , pp. 1492
    • Lam, M.1    Adam, K.2    Neureuther, A.3
  • 96
    • 1642514658 scopus 로고    scopus 로고
    • Simulation of extreme ultraviolet masks with defective multilayers
    • P. Evanschitzky, A. Erdmann, M. Besacier, and P. Schiavone, Simulation of extreme ultraviolet masks with defective multilayers, Proc. SPIE, 5130, 1035 (2003).
    • (2003) Proc. SPIE , vol.5130 , pp. 1035
    • Evanschitzky, P.1    Erdmann, A.2    Besacier, M.3    Schiavone, P.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.