Towards a universal resist dissolution model for lithography simulation

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4404, Issue , 2001, Pages 111-122

  Robertson, S ^a   Mack, C ^a   Maslow, M ^a  

^a SHIPLEY COMPANY   (United States)

Author keywords

Dissolution model; Lithography simulation; Rate equation

Indexed keywords

COMPUTER SIMULATION; CURVE FITTING; MATHEMATICAL MODELS;

RATE EQUATIONS;

PHOTORESISTS;

EID: 0034852070     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.425197     Document Type: Article

References (17)

1. Optical Lithography
2. Characterization of positive photoresist
3. In-situ measurement of dielectric thickness during etching or developing processes
4. Modeling projection printing of positive photoresists
5. Advanced topics in lithography modeling
6. Development of positive photoresist
7. The modelling of post exposure bake and surface inhibition effects in positive photoresist using absolute thickness data
8. Development of positive photoresists
9. A comparison of recent development models in optical lithography simulation
10. A new development model for lithography simulation
11. Notch model for photoresist dissolution
12. Study of the relationship between exposure margin and photolithographic process latitude and mask linearity
13. Characterization and modeling of high resolution positive photoresists
14. New kinetic model for resist dissolution
15. Experimental Investigation of a novel dissolution model
16. An improved Notch model for resist dissolution in lithography simulation
17. Factors affecting pitch bias in lithography simulation