Simulation of Extreme Ultraviolet Masks with Defective Multilayers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5130, Issue , 2003, Pages 1035-1045

  Evanschitzky, Peter ^a   Erdmann, Andreas ^a   Besacier, Maxime ^b   Schiavone, Patrick ^b  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b CNRS   (France)

Author keywords

Defect; EUV lithography; Mask; Multilayer; Simulation

Indexed keywords

COMPUTER SIMULATION; DEFECTS; DIFFRACTION; ELECTROMAGNETIC FIELDS; IMAGE ANALYSIS; LIGHT ABSORPTION; LIGHT REFLECTION; OPTICAL MULTILAYERS; PHOTOLITHOGRAPHY; PROJECTION SYSTEMS; SUBSTRATES; ULTRAVIOLET RADIATION;

AERIAL IMAGES; EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL);

MASKS;

EID: 1642514658     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.504075     Document Type: Conference Paper

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