The impact of the EUV mask phase response on the asymmetry of Bossung curves as predicted by rigorous EUV mask simulations

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4343, Issue 1, 2001, Pages 392-401

  Krautschik, Christof ^a   Ito, Masaaki ^a   Nishiyama, Iwao ^a   Otaki, Katsura ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Bossung curve; EUV mask; Mask phase response; Rigorous mask modeling

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; ELECTRIC FIELDS; INTERFACES (MATERIALS); LIGHT SCATTERING; PHOTOLITHOGRAPHY;

EXTREME ULTRAVIOLET (EUV) MASKS;

MASKS;

EID: 0034769038     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.436666     Document Type: Article

References (7)

1. Some image modeling issues for I-line, 5x phase shifting masks
2. Modeling oblique incidence effects in photomask
3. Rigorous EUV mask simulations using different source approximations
4. EUV stepper characterization using lithography modeling