Quantifying EUV imaging tolerances for the 70, 50, and 35 nm modes through rigorous aerial image simulations

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4343, Issue , 2001, Pages 524-534

  Krautschik, C ^a   Ito, M ^a   Nishiyama, I ^a   Mori, T ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

CD control; ITRS Roadmap; Lens aberrations; Lens flare; Static lens distortion

Indexed keywords

AERIAL PHOTOGRAPHY; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; IMAGING TECHNIQUES; LENSES; MATHEMATICAL MODELS; ULTRAVIOLET RADIATION;

CRITICAL DIMENSION (CD) CONTROL; EXTREME ULTRAVIOLET (EUV) IMAGING;

PHOTOGRAMMETRY;

EID: 0034757240     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.436684     Document Type: Conference Paper

References (8)

1. EUV engineering test stand
2. Some image modeling issues for I-line, 5x phase shifting masks
3. Modeling oblique incidence effects in photomask
4. Rigorous EUV mask simulations using different source approximations