Effects of multilayer mask roughness on extreme ultraviolet lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 1, 2002, Pages 344-349

  Deng, Yunfei ^a   Pistor, Tom ^a   Neureuther, Andrew R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; ELECTROMAGNETISM; FINITE DIFFERENCE METHOD; MASKS; MULTILAYERS; PHASE SHIFT; POLARIZATION; REFLECTION; TIME DOMAIN ANALYSIS;

EXTREME ULTRAVIOLET LITHOGRAPHY; MASK ROUGHNESS;

PHOTOLITHOGRAPHY;

EID: 0036123546     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1447252     Document Type: Conference Paper

References (10)