Comparison of simulation approaches for chemically amplified resists

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4404, Issue , 2001, Pages 99-110

  Erdmann, Andreas ^a   Henke, Wolfgang ^b   Robertson, Stewart A ^c   Richter, Ernst ^b   Tollkuehn, Bernd ^a   Hoppe, Wolfgang ^d  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c SHIPLEY COMPANY   (United States)

^d Sigma C GmbH   (Germany)

Author keywords

Chemical amplified resists; Lithography simulation; Resist models

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; MATHEMATICAL MODELS; PHOTOCHEMICAL REACTIONS; THERMAL EFFECTS;

CHEMICALLY AMPLIFIED RESISTS (CAR); PHOTOACTIVE COMPOUNDS (PAC);

PHOTORESISTS;

EID: 0034846063     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.425196     Document Type: Article

References (21)

1. Analysing the dissolution characteristics of deep UV chemically amplified photoresist
2. Calibration of chemical amplified resist models
3. Rigorous diffraction analysis for furore mask technology
4. Optimizing the resist to the aerial image in a chemically amplified system
5. Modeling and simulation of a deep-ultraviolet acid hardening resist
6. Kinetic model and simulation for chemically amplified resists
7. Modeling of edge roughness in ion projection lithography
8. Effect of resist components on image spreading during postexposure bake of chemically amplified resists
9. The modeling of a positive chemically amplified photoresist for X-ray lithography
10. Characterization and modeling of a positive acting chemically amplified resist
11. Non-constant diffusion coefficients: Short descripton of modeling and comparison to experimental results
12. Study of resolution limits due to intrinsic bias in chemically amplified photoresists
13. Novel diffusion analysis in advanced chemically amplified DUV resists using photometric methods
14. Factors affecting pitch bias in lithography simulation
15. Lithography model tuning: Matching simulation to experiment
16. Automatic resist parameter calibration procedure for lithography simulation
17. Modeling and simulation of a chemically amplified DUV resist using the effective acid concept
18. Lithographic effects of mask critical dimension error
19. Reaction diffusion kinetics in deep-UV positive tone resist systems
20. Simulation of locally enhanced three-dimensional diffusion in chemically amplified resists