Approximate models for resist processing effects

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2726, Issue , 1996, Pages 198-207

  Brunner, T A ^a   Ferguson, R A ^a  

^a IBM   (United States)

Author keywords

Bias; Development; Diffusion; Linewidth; Linewidth control; Lithography; Lumped parameter model; Process window; Resist processing; Simulation

Indexed keywords

ABERRATIONS; COMPUTER SIMULATION; DIFFUSION; ELECTRON BEAM LITHOGRAPHY; IMAGE ANALYSIS; MATHEMATICAL MODELS;

AERIAL IMAGES; RESIST PROCESSING;

X RAY LITHOGRAPHY;

EID: 0030314809     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.240906     Document Type: Conference Paper

References (11)

1. High resolution lithography with projection printing
2. Aerial image studies of an advanced DUV exposure system
3. Line-profile resist development simulation techniques
4. Diffraction effects and image blurring in x-ray proximity printing
5. Lumped parameter model for optical lithography
6. Enhanced lumped parameter model for photolithography
7. Study of the relationship between exposure margin and photolithographic process latitude and mask linearity
8. A new tool for PSM evaluation: The stepper equivalent aerial image measurement system - AIMS
9. Reaction-diffusion modeling and simulations in positive DUV resists