Model of {311} defect evolution based on nucleation theory

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1997, Pages 73-76

  Hobler, G ^a   Rafferty, C S ^a   Senkader, S ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CRYSTAL DEFECTS; CRYSTAL GROWTH; DIFFUSION; GIBBS FREE ENERGY; NUCLEATION; SEMICONDUCTING BORON;

DEFECT EVOLUTION; TRANSIENT ENHANCED DIFFUSION;

MATHEMATICAL MODELS;

EID: 0030700104     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)