Transient enhanced diffusion of Sb and B due to MeV silicon implants

Applied Physics Letters

Volumn 70, Issue 24, 1997, Pages 3281-3283

  Eaglesham, D J ^a   Haynes, T E ^a,b   Gossmann, H J ^a   Jacobson, D C ^a   Stolk, P A ^a   Poate, J M ^a,c  

^a LUCENT TECHNOLOGIES   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001016491     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119150     Document Type: Article

References (12)

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