SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Materials Research Society Symposium - Proceedings

Volumn 610, Issue , 2000, Pages

Junctions for deep sub-100 nm MOS: How far will ion implantation take us?

(3) Gossmann, H J a Rafferty, C S a Keys, P a

a UNIVERSITY OF FLORIDA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ACTIVATION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ION IMPLANTATION; MOS DEVICES; SOLUBILITY;

INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; SOURCE DRAIN DOPANT PROFILE; VOLTAGE DROP;

SEMICONDUCTOR JUNCTIONS;

EID: 0034439944 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (12)

References (14)

1
- 0003552056
- Semiconductor Industry Association; (SIA, San Jose)
- (1999) The National Technology Roadmap for Semiconductors

2
- 0004912035
- IMSIL; TU Vienna, Austria
- (1996)
- Hobler, G.¹

3
- 11344284982
- (1990) J. Appl. Phys. , vol.68 , pp. 3250
- Solmi, S.¹ Landi, E.² Baruffaldi, F.³

4
- 0000725857
- (1998) J. Appl. Phys. , vol.83 , pp. 2484
- Solmi, S.¹ Nobili, D.²

5
- 4243733671
- 258c257,258
- (1999) Electrochem. Soc. Proc. , vol.99 , Issue.10 , pp. 133
- Fiory, A.T.¹ Bourdelle, K.K.² Lefrancois, M.E.³ Camm, D.M.⁴ Agarwal, A.⁵

6
- 0001652427
- (1999) Mater. Sci. in Semicond. Proc. , vol.1 , pp. 237
- Agarwal, A.¹ Fiory, A.T.² Gossmann, H.-J.³ Rafferty, C.S.⁴ Frisella, P.⁵ Hebb, J.⁶

7
- 0004913033
- private communication
- Saito, S.¹

8
- 84864682372
- (1999) Electrochem. Soc. Proc. , vol.99 , Issue.10 , pp. 151
- Downey, D.F.¹ Felch, S.B.² Falk, S.W.³

9
- 0022751618
- (1986) IEEE Trans. Electron. Dev. , vol.33 ED , pp. 965
- Ng, K.K.¹ Lynch, W.T.²

10
- 0014735482
- (1970) Solid State Electronics , vol.13 , pp. 239
- Yu, A.Y.C.¹

11
- 0033894377
- (2000) IEEE Trans. Electron Dev. , vol.47 , pp. 160
- Taur, Y.¹

12
- 0032644936
- (1999) MRS Symp. Proc. , vol.568 , pp. 19
- Agarwal, A.¹ Gossmann, H.-J.² Fiory, A.T.³

13
- 21544471898
- (1993) J. Appl. Phys. , vol.73 , pp. 8237
- Gossmann, H.-J.¹ Unterwald, F.C.² Luftman, H.S.³

14
- 0012163816
- "Well-tempered" bulk-Si NMOSFET device
- Antoniadis, D.A.¹ Djomehri, I.J.² Jackson, K.M.³ Miller, S.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.