Interface induced uphill diffusion of boron: An effective approach for ultrashallow junction

IEEE Electron Device Letters

Volumn 22, Issue 2, 2001, Pages 65-67

  Wang, Howard Chih Hao ^a,b   Wang, Chih Chiang ^d   Chang, Chih Sheng ^a   Wang, Tahui ^b   Griffin, Peter B ^c   Diaz, Carlos H ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c STANFORD UNIVERSITY   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DIFFUSION; RAPID THERMAL ANNEALING; SEMICONDUCTING BORON; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

TRANSIENT INDUCED DIFFUSION (TED); ULTRASHALLOW JUNCTIONS;

MOS DEVICES;

EID: 0035249854     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.902833     Document Type: Article

References (10)

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