A new model for {311} defects based on in-situ measurements

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 511-514

  Law, M E ^a   Jones, K S ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DISSOLUTION; IN SITU PROCESSING; NUCLEATION; TRANSMISSION ELECTRON MICROSCOPY;

TRANSIENT ENHANCED DIFFUSION;

DIFFUSION IN SOLIDS;

EID: 0034454243     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. Implantation and transient B diffusion in Si: The source of the interstitials
2. Simulation of cluster evaporation and transient enhanced diffusion in silicon
3. A model for {311} defect evolution based on nucleation theory
4. A predictive model for transient enhanced diffusion based on evolution of {311} defects
5. The energetics of {113} stacking fault formation in Si from supersaturated interstitials
6. Ion-beam processing of silicon at keV energies: A molecular dynamics study
7. Fundamental diffusion issues for deep-submicron device processing
8. Damage evolution and surface defect segregation in low-ebergy ion-implanted silicon
9. Energy dependence of transient enhanced diffusion and defect kinetics
10. Cross-sectional transmission electron microscopy analysis of {311} defects from Si implantation into silicon
11. Transient phosphorus diffusion below the amorphization threshold