Cluster formation during annealing of ultra-low-energy boron-implanted silicon

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 435-439

  Collart, E J H ^a   Murrell, A J ^a   Foad, M A ^a   Van Den Berg, J A ^b   Zhang, S ^b   Armour, D ^b   Goldberg, R D ^b   Wang, T S ^c   Cullis, A G ^c   Clarysse, T ^d   Vandervorst, W ^d  

^a Applied Materials Implant Division   (United Kingdom)

^b UNIVERSITY OF SALFORD   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

^d IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CMOS INTEGRATED CIRCUITS; DIFFUSION IN SOLIDS; ELECTRIC RESISTANCE; ION IMPLANTATION; RADIATION DAMAGE; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

IMPLANT IMAGE; TRANSIENT ENHANCED DIFFUSION (TED);

SEMICONDUCTING SILICON;

EID: 0033698090     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591207     Document Type: Article

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