Influence of Ostwald ripening of end-of-range defects on transient enhanced diffusion in silicon

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 11 A, 1999, Pages

  Uematsu, Masashi ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; BORON; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; ION IMPLANTATION; MATHEMATICAL MODELS; PHOSPHORUS; POINT DEFECTS; SEMICONDUCTOR DOPING;

OSTWALD RIPENING; TRANSIENT ENHANCED DIFFUSION (TED);

SEMICONDUCTING SILICON;

EID: 0033226096     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l1213     Document Type: Article

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