SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Applied Physics Letters

Volumn 75, Issue 11, 1999, Pages 1568-1570

Shallow p-type SiGeC layers synthesized by ion implantation of Ge, C, and B in Si

(4) Kurata, H a Suzuki, K a Futatsugi, T a Yokoyama, N a

a FUJITSU LABORATORIES LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005966274 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.124757 Document Type: Article

Times cited : (14)

References (14)

1
- 84886448163
- M. Rodder, M. Hanratty, D. Rogers, T. Laaksonen, J. C. Hu, S. Murtaza, C.-P. Chao, S. Hattangady, S. Aur, A. Amerasekera, and I.-C. Chen, Tech. Dig. Int. Electron Devices Meet. , 223 (1997).
- (1997) Tech. Dig. Int. Electron Devices Meet. , pp. 223
- Rodder, M.¹ Hanratty, M.² Rogers, D.³ Laaksonen, T.⁴ Hu, J.C.⁵ Murtaza, S.⁶ Chao, C.-P.⁷ Hattangady, S.⁸ Aur, S.⁹ Amerasekera, A.¹⁰ Chen, I.-C.¹¹

2
- 0030182791
- Y. S. Chieh, J. P. Krusius, D. Green, and M. Ozturk, IEEE Electron Device Lett. 17, 360 (1996).
- (1996) IEEE Electron Device Lett. , vol.17 , pp. 360
- Chieh, Y.S.¹ Krusius, J.P.² Green, D.³ Ozturk, M.⁴

3
- 0031548439
- J. Kojima, S. Zaima, H. Shinoda, H. Iwano, H. Ikeda, and Y. Yasuda, Appl. Surf. Sci. 117/118, 317 (1997).
- (1997) Appl. Surf. Sci. , vol.117-118 , pp. 317
- Kojima, J.¹ Zaima, S.² Shinoda, H.³ Iwano, H.⁴ Ikeda, H.⁵ Yasuda, Y.⁶

4
- 0025430827
- D. C. Paine, D. J. Howard, N. G. Stoffel, and J. A. Horton, J. Mater. Res. 5, 1023 (1990).
- (1990) J. Mater. Res. , vol.5 , pp. 1023
- Paine, D.C.¹ Howard, D.J.² Stoffel, N.G.³ Horton, J.A.⁴

5
- 0041966426
- Q. Z. Hong, J. G. Zhu, J. W. Mayer, W. Xia, and S. S. Lau, J. Appl. Phys. 71, 1768 (1992).
- (1992) J. Appl. Phys. , vol.71 , pp. 1768
- Hong, Q.Z.¹ Zhu, J.G.² Mayer, J.W.³ Xia, W.⁴ Lau, S.S.⁵

6
- 0343511339
- K. Eberl, S. S. Iyer, S. Zollner, J. C. Tsang, and F. K. LeGoues, Appl. Phys. Lett. 60, 3033 (1992).
- (1992) Appl. Phys. Lett. , vol.60 , pp. 3033
- Eberl, K.¹ Iyer, S.S.² Zollner, S.³ Tsang, J.C.⁴ LeGoues, F.K.⁵

7
- 0027702667
- J. L. Regolini, F. Gisbert, G. Dollino, and P. Boucaud, Mater. Lett. 18, 57 (1993).
- (1993) Mater. Lett. , vol.18 , pp. 57
- Regolini, J.L.¹ Gisbert, F.² Dollino, G.³ Boucaud, P.⁴

8
- 21544453240
- S. Nishikawa, A. Tanaka, and T. Yamaji, Appl. Phys. Lett. 60, 2270 (1992).
- (1992) Appl. Phys. Lett. , vol.60 , pp. 2270
- Nishikawa, S.¹ Tanaka, A.² Yamaji, T.³

9
- 36449001067
- P. A. Stolk, D. J. Eaglesham, H.-J. Gossmann, and J. M. Poate, Appl. Phys. Lett. 66, 1370 (1995).
- (1995) Appl. Phys. Lett. , vol.66 , pp. 1370
- Stolk, P.A.¹ Eaglesham, D.J.² Gossmann, H.-J.³ Poate, J.M.⁴

10
- 0001257841
- A. Hoefler, T. Feudel, N. Strecker, W. Fichtner, K. H. Stegmann, H. Syhre, and G. Dallman, J. Appl. Phys. 78, 3671 (1995).
- (1995) J. Appl. Phys. , vol.78 , pp. 3671
- Hoefler, A.¹ Feudel, T.² Strecker, N.³ Fichtner, W.⁴ Stegmann, K.H.⁵ Syhre, H.⁶ Dallman, G.⁷

11
- 0004068386
- edited by F. F. Y. Wang Academic, New York
- R.B. Fair, in Impurity Doping Process in Silicon, edited by F. F. Y. Wang (Academic, New York, 1981).
- (1981) Impurity Doping Process in Silicon
- Fair, R.B.¹

12
- 36449003027
- P. Kuo, J. L. Hoyt, J. F. Gibbons, J. E. Turner, R. D. Jacowitz, and T. I. Kamins, Appl. Phys. Lett. 62, 612 (1993).
- (1993) Appl. Phys. Lett. , vol.62 , pp. 612
- Kuo, P.¹ Hoyt, J.L.² Gibbons, J.F.³ Turner, J.E.⁴ Jacowitz, R.D.⁵ Kamins, T.I.⁶

13
- 0000755647
- N. Moriya, L. C. Feldman, H. S. Luftman, C. A. King, J. Bevk, and B. Freer, Phys. Rev. Lett. 71, 883 (1993).
- (1993) Phys. Rev. Lett. , vol.71 , pp. 883
- Moriya, N.¹ Feldman, L.C.² Luftman, H.S.³ King, C.A.⁴ Bevk, J.⁵ Freer, B.⁶

14
- 0040679686
- H. Wong, N. W. Cheung, P. K. Chu, J. Liu, and J. W. Mayer, Appl. Phys. Lett. 52, 1023 (1988).
- (1988) Appl. Phys. Lett. , vol.52 , pp. 1023
- Wong, H.¹ Cheung, N.W.² Chu, P.K.³ Liu, J.⁴ Mayer, J.W.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.