Low energy implantation of boron with decaborane ions

Materials Research Society Symposium - Proceedings

Volumn 610, Issue , 2000, Pages

  Albano, M A ^a   Babaram, V ^a   Poate, J M ^a   Sosnowski, M ^a   Jacobson, D C ^a  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; COMPOSITION EFFECTS; ION BEAMS; ION IMPLANTATION; IONIZATION; KINETIC ENERGY; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

DECABORANE IONS; DOSS LOSS; ELECTROSTATIC BEAM DEFLECTION; LOW ENERGY IMPLANTATION; MAGNETIC MASS ANALYSIS; MOLECULAR IONS; NUCLEAR REACTION ANALYSIS;

BORON;

EID: 0034439650     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. The International Technology Roadmap for Semiconductors