Ultra-shallow junction formation using conventional ion implantation and rapid thermal annealing

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 293-299

  Agarwal, Aditya ^a,b  

^a AXCELIS TECHNOLOGIES   (United States)

^b Sumitomo Eaton Nova Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONVENTIONAL TECHNOLOGY; DOPANT DIFFUSION; EXPERIMENTAL DATA; GATE-LENGTH; IMPLANT ENERGY; JUNCTION DEPTH; LOW ENERGIES; OUT-DIFFUSION; P-TYPE; PEAK TEMPERATURES; PHYSICAL PHENOMENA; RAMP RATES; RELATIVE CONTRIBUTION; SOURCE/DRAIN EXTENSION; SUB-KEV; TEMPERATURE RAMP; THERMAL BUDGET; ULTRA LOW ENERGY; ULTRA SHALLOW JUNCTION;

DIFFUSION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; TECHNOLOGY;

ION IMPLANTATION;

EID: 78649844915     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924147     Document Type: Conference Paper

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