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Volumn 77, Issue 13, 2000, Pages 1976-1978

Accurate measurements of the intrinsic diffusivities of boron and phosphorus in silicon

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EID: 0000426452     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1313248     Document Type: Article
Times cited : (72)

References (18)
  • 13
    • 0002734525 scopus 로고
    • edited by F. F. Y. Wang North-Holland, New York
    • R. B. Fair, in Impurity Doping Processes in Silicon, edited by F. F. Y. Wang (North-Holland, New York, 1981), p. 315.
    • (1981) Impurity Doping Processes in Silicon , pp. 315
    • Fair, R.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.