Fundamental diffusion issues for deep-submicron device processing

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 333-336

  Cowern, N E B ^a   Jaraiz, M ^a   Cristiano, F ^a   Claverie, A ^a   Mannino, G ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; INTEGRATED CIRCUIT MANUFACTURE; PHASE DIAGRAMS; POINT DEFECTS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

BORON ENHANCED DIFFUSION; DOPANT DIFFUSION; IMPLANT DAMAGE ANNEALING; NONEQUILIBRIUM DIFFUSION MODELLING; OSTWALD RIPENING; SOFTWARE PACKAGE TSUPREM4; TRANSIENT ENHANCED DIFFUSION;

DIFFUSION IN SOLIDS;

EID: 0033332634     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)