Ultra-shallow junctions by ion implantation and rapid thermal annealing: Spike-anneals, ramp rate effects

Materials Research Society Symposium - Proceedings

Volumn 568, Issue , 1999, Pages 19-30

  Agarwal, Aditya ^a   Gossmann, Hans J ^b   Fiory, Anthony T ^b  

^a EATON CORPORATION   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; ION IMPLANTATION; RAPID THERMAL ANNEALING; SEMICONDUCTING BORON;

TRANSIENT ENHANCED DIFFUSION (TED); ULTRASHALLOW JUNCTION FORMATION;

SEMICONDUCTOR JUNCTIONS;

EID: 0032644936     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-568-19     Document Type: Article

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