Explanation of Reverse Short Channel Effect by Defect Gradients

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 311-314

  Rafferty, C S ^a   Vuong, H H ^a   Eshraghi, S A ^a   Giles, M D ^b   Pinto, M R ^a   Hillenius, S J ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; FIELD EFFECT TRANSISTORS; DOPING (ADDITIVES); GATES (TRANSISTOR); ION IMPLANTATION; MATHEMATICAL MODELS;

BODY EFFECT; BURIED CHANNELS; CHANNEL PROFILE; DRAIN IMPLANTATION; FLAT CHANNELS; REVERSE SHORT CHANNEL EFFECTS; SHALLOW CHANNELS; SHORT CHANNELS; SOURCE-DRAIN; TRANSIENT ENHANCED DIFFUSION;

THRESHOLD VOLTAGE; MOSFET DEVICES;

DEFECT GRADIENTS; REVERSE SHORT CHANNEL EFFECT (RSCE); THRESHOLD VOLTAGE;

EID: 0027839372     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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