The dose, energy, and time dependence of silicon self-implantation induced transient enhanced diffusion at 750 °C

Applied Physics Letters

Volumn 69, Issue 14, 1996, Pages 2113-2115

  Chao, H S ^a   Griffin, P B ^a   Plummer, J D ^a   Rafferty, C S ^b  

^a STANFORD UNIVERSITY   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000978955     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116897     Document Type: Article

References (19)

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