Failure modes and mechanisms of InP-based and metamorphic high electron mobility transistors

Microelectronics Reliability

Volumn 42, Issue 4-5, 2002, Pages 685-708

  Meneghesso, Gaudenzio ^a   Zanoni, Enrico ^a  

^a UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; DEGRADATION; ENERGY GAP; FAILURE ANALYSIS; HOT CARRIERS; IMPACT IONIZATION; MICROWAVES; MILLIMETER WAVES; OHMIC CONTACTS; RELIABILITY; SEMICONDUCTING INDIUM COMPOUNDS; TRANSCONDUCTANCE;

DONOR COMPENSATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036540905     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00045-8     Document Type: Article

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