A model for hydrogen-induced piezoelectric effect in InP HEMTS and GaAs PHEMTs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2001, Pages 452-455

  Mertens, S D ^a   Del Alamo, J A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAS ABSORPTION; GATES (TRANSISTOR); HETEROJUNCTIONS; HYDROGEN; MATHEMATICAL MODELS; PIEZOELECTRICITY; POLARIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; THRESHOLD VOLTAGE;

CHARGE DISTRIBUTION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034852019     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)