0.1-μm InAlAs/InGaAs HEMTS with an InP-recess-etch stopper grown by MOCVD

Microwave and Optical Technology Letters

Volumn 11, Issue 3, 1996, Pages 135-139

  Enoki, Takatomo ^a   Ito, Hiroshi ^a   Ikuta, Kenji ^a   Umeda, Yohtaro ^a   Ishii, Yasunobu ^a  

^a NTT CORPORATION   (Japan)

Author keywords

HEMT; InGaAs; Recess etch stopper; Ring oscillator; Threshold voltage

Indexed keywords

DIGITAL INTEGRATED CIRCUITS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OSCILLATORS (ELECTRONIC); SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

DESIGNABILITY; PROPAGATION DELAY TIME; RECESS DEPTH CONTROL; RECESS ETCH STOPPER; RING OSCILLATOR; THRESHOLD VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030086109     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1098-2760(19960220)11:3<135::AID-MOP7>3.0.CO;2-M     Document Type: Article

References (10)

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