A physical model for the kink effect in InAlAs/InGaAs HEMT's

IEEE Transactions on Electron Devices

Volumn 47, Issue 5, 2000, Pages 922-930

  Somerville, Mark H ^a,b   Ernst, Alexander ^a,c   Del Alamo, Jesus A ^a,d  

^a IEEE   (United States)

^b VASSAR COLLEGE   (United States)

^c MCKINSEY AND COMPANY   (United States)

^d MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

HEMT; InAlAs; InGaAs; Kink effect

Indexed keywords

EID: 0001256891     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.841222     Document Type: Article

References (32)

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