Impact ionization suppression by quantum confinement: Effects on the dc and microwave performance of narrow-gap channel InAs/AlSb HFET's

IEEE Transactions on Electron Devices

Volumn 46, Issue 5, 1999, Pages 826-832

  Bolognesi, C R ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; HETEROJUNCTIONS; IMPACT IONIZATION; LEAKAGE CURRENTS; MICROWAVES; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TRANSCONDUCTANCE;

ALUMINUM ANTIMONIDE; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS (HFET); INDIUM ARSENIDE; QUANTUM CONFINEMENT;

FIELD EFFECT TRANSISTORS;

EID: 0032670722     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.760386     Document Type: Article

References (18)

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