Reliability of passivated 0.15 μm InAlAs/InGaAs HEMTs with pseudomorphic channel

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1999, Pages 99-102

  Dammann, M ^a   Chertouk, M ^a   Jantz, W ^a   Koehler, K ^a   Schmidt, K H ^a   Weimann, G ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; FAILURE ANALYSIS; GATES (TRANSISTOR); HIGH TEMPERATURE TESTING; RELIABILITY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; STRESSES; TEMPERATURE; TRANSCONDUCTANCE;

ELECTRICAL STRESS; PSEUDOMORPHIC CHANNEL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032646585     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (13)