On the frequency dependent drain conductance of ion-implanted GaAs MESFETs

IEEE Transactions on Electron Devices

Volumn 47, Issue 12, 2000, Pages 2255-2260

  Nakajima, Shigeru ^a   Yanagisawa, Masaki ^a   Tsumura, Eiji ^a   Sakurada, Takashi ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

Frequency dependent drain conductance; GaAs; High speed logic IC; Interface phenomena; MESFET

Indexed keywords

EID: 0000475223     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.887005     Document Type: Article

References (16)

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