The effect of hot electron stress on the DC and microwave characteristics of GaAs-PHEMTs and InP-HEMTs

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1997, Pages 242-247

  Menozzi, R ^a   Borgarino, M ^a   Cova, P ^a   Baeyens, Y ^a   Van Hove, M ^a   Fantini, F ^a  

^a UNIVERSITY OF PARMA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

HOT ELECTRON STRESS;

HOT CARRIERS; MICROWAVES; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE TESTING; SILICON NITRIDE; THERMAL STRESS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030707226     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)