Hot electron degradation effects in 0.14 μm AlInAs/ GaInAs/InP HEMTs

Microelectronics Reliability

Volumn 39, Issue 12, 1999, Pages 1765-1771

  Nawaz, M ^a   Zirath, H ^a   Choumas, E ^a   Persson, S H M ^a   Jasik, A ^b   Strupinski, W ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001429335     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00183-3     Document Type: Article

References (22)

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