-
3
-
-
0001643119
-
Metamorphic InAlAs/InGaAs HEMT MMIC technology on GaAs substrate: From promise to reality
-
Chertouk M, Benkhelifa M, Dammann M Walther M, Köhler K, Weimann G. Metamorphic InAlAs/InGaAs HEMT MMIC Technology on GaAs Substrate: from promise to reality. In: GaAs Mantech Conference, 2000, pp. 233B236.
-
(2000)
GaAs Mantech Conference
-
-
Chertouk, M.1
Benkhelifa, M.2
Walther M, D.M.3
Köhler, K.4
Weimann, G.5
-
4
-
-
0032293975
-
Low noise bias reliability of AlInAs/GalnAs MODFETs with linearly graded low-temperature buffer layers grown on GaAs substrates
-
Wakita A S, Rohdin H, Robbins V M, Moll N, Su C Y, Nagy A, Basile D P. Low noise bias reliability of AlInAs/GalnAs MODFETs with linearly graded low-temperature buffer layers grown on GaAs substrates. In: Intern. Conf. on Indium Phosphide and Related Materials, IPRM'98 Conference Proceedings, 1998, pp. 223B226.
-
(1998)
Intern. Conf. on Indium Phosphide and Related Materials, IPRM'98 Conference Proceedings
-
-
Wakita, A.S.1
Rohdin, H.2
Robbins, V.M.3
Moll, N.4
Su, C.Y.5
Nagy, A.6
Basile, D.P.7
-
5
-
-
0033874881
-
-
Dammann M, Chertouk M, Jantz W, Köhler K, Marsetz W, Schmidt K, Weimann G. Microelectronics Reliability. 2000; 40:287-291.
-
(2000)
Microelectronics Reliability
, vol.40
, pp. 287-291
-
-
Dammann, M.1
Chertouk, M.2
Jantz, W.3
Köhler, K.4
Marsetz, W.5
Schmidt, K.6
Weimann, G.7
-
6
-
-
0001120139
-
Donor passivation in n-AlInAs layers by fluorine
-
Yamamoto Y, Hayafuji N, Fujii N, Kadoiwa K, Yoshida N, Sonoda T, Takamiya S. Donor passivation in n-AlInAs layers by fluorine. Journal of Electronic Materials 1996;25:685B690.
-
(1996)
Journal of Electronic Materials
, vol.25
-
-
Yamamoto, Y.1
Hayafuji, N.2
Fujii, N.3
Kadoiwa, K.4
Yoshida, N.5
Sonoda, T.6
Takamiya, S.7
-
7
-
-
0032139110
-
Reliability improvement of AllnAs/GalnAs high electron mobility transistors by fluorine incorporation control
-
Hayafuji N, Yamamoto Y, Ishida T, Sato K. Reliability improvement of AllnAs/GalnAs high electron mobility transistors by fluorine incorporation control. Journal of Electrochem. Soc. 1998, 145:295162954.
-
(1998)
Journal of Electrochem. Soc.
, vol.145
, pp. 295162954
-
-
Hayafuji, N.1
Yamamoto, Y.2
Ishida, T.3
Sato, K.4
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