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Volumn 40, Issue 8-10, 2000, Pages 1709-1713

Reliability of InAlAs/InGaAs HEMTs grown on GaAs substrate with metamorphic buffer

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Indexed keywords


EID: 0001236073     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00164-5     Document Type: Article
Times cited : (18)

References (7)
  • 7
    • 0032139110 scopus 로고    scopus 로고
    • Reliability improvement of AllnAs/GalnAs high electron mobility transistors by fluorine incorporation control
    • Hayafuji N, Yamamoto Y, Ishida T, Sato K. Reliability improvement of AllnAs/GalnAs high electron mobility transistors by fluorine incorporation control. Journal of Electrochem. Soc. 1998, 145:295162954.
    • (1998) Journal of Electrochem. Soc. , vol.145 , pp. 295162954
    • Hayafuji, N.1    Yamamoto, Y.2    Ishida, T.3    Sato, K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.