Electrical properties of InAlAs/InGaAs modulation doped structure after SiN passivated annealing

Journal of Applied Physics

Volumn 81, Issue 3, 1997, Pages 1311-1314

  Wakejima, A ^a   Onda, K ^a   Ando, Y ^a   Fujihara, A ^a   Mizuki, E ^a   Nakayama, T ^a   Miyamoto, H ^a   Kuzuhara, M ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002946555     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363911     Document Type: Article

References (9)

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