Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMT's

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 43-46

  Meneghesso, Gaudenzio ^a   Mion, Alvise ^a   Neviani, Andrea ^a   Matloubian, Mehran ^b   Brown, Julia ^b   Hafizi, Madjid ^b   Liu, Takyiu ^b   Canali, Claudio ^c,d   Pavesi, Maura ^e   Manfredi, Manfredo ^e   Zanoni, Enrico ^c,d  

^a UNIVERSITY OF PADOVA   (Italy)

^b Hughes Aircraft Co   (United States)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^d lstituto Nazionale Fisica della Materia   (Italy)

^e UNIVERSITY OF PARMA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GALLIUM ARSENIDE; HIGH ELECTRON MOBILITY TRANSISTORS; IMPACT IONIZATION; INDIUM PHOSPHIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR ALLOYS; TEMPERATURE; ELECTRIC BREAKDOWN; ELECTRIC VARIABLES MEASUREMENT; ELECTROLUMINESCENCE; EMISSION SPECTROSCOPY; IONIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; TEMPERATURE MEASUREMENT;

CHANNEL QUANTIZATION; CHANNEL TEMPERATURE; COMPOSITE CHANNEL; ELECTRICAL MEASUREMENT; ELECTROLUMINESCENCE SPECTROSCOPY; ELECTRON IMPACT-IONIZATION; OFF STATE; ON STATE; ON-STATE BREAKDOWN; TEMPERATURE COEFFICIENT;

III-V SEMICONDUCTORS; HIGH ELECTRON MOBILITY TRANSISTORS;

CHANNEL QUANTIZATION; IMPACT IONIZATION; INDIUM GALLIUM ARSENIDE; OFF STATE BREAKDOWN EFFECTS; ON STATE BREAKDOWN EFFECTS;

EID: 0030416758     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553118     Document Type: Conference Paper

References (9)

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2. M. Matloubian, T.Liu, L.M.Jelloian, M.O.Thompson, R.A.Rhodes "K-band GaInAdInP channel power HEMTs" Electronics Letters Vol. 31, N.9, pp.761-762, April 1995;
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