On-state and off-state breakdown in GalnAs/InP composite-channel HEMT's with variable GalnAs channel thickness

IEEE Transactions on Electron Devices

Volumn 46, Issue 1, 1999, Pages 2-9

  Meneghesso, Gaudenzio ^a,e   Neviani, Andrea ^b   Oesterholt, René ^c   Matloubian, Mehran ^a   Liu, Takyiu ^d   Brown, Julia J ^a   Canali, Claudio ^b   Zanoni, Enrico ^c  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b UNIVERSITY OF PADOVA   (Italy)

^c INFM   (Italy)

^d Hughes Aircraft Co   (United States)

^e UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

Breakdown; Impact ionization; Indium Phosphide

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENT CARRYING CAPACITY (CABLES); ELECTRIC FIELD EFFECTS; ENERGY GAP; GATES (TRANSISTOR); IMPACT IONIZATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

SHEET CARRIER DENSITY REDUCTION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032713390     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.737434     Document Type: Article

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