Reliability evaluation of MOCVD grown AlInAs/GaInAs/InP HEMTs

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1999, Pages 103-109

  Nawaz, M ^a   Strupinski, W ^a   Stenarson, J ^a   Persson, S H M ^a   Zirath, H ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIERS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL STRESS; THRESHOLD VOLTAGE;

PERMANENT NEGATIVE SHIFT; SCHOTTKY LAYER; STRESS MEASUREMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032645507     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (20)